Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

2005 ◽  
Vol 341 (1-4) ◽  
pp. 297-302 ◽  
Author(s):  
Q.X. Zhao ◽  
S.M. Wang ◽  
Y.Q. Wei ◽  
M. Sadeghi ◽  
A. Larsson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Carrier Localization ◽  
Mobility Edge ◽  
Localized Excitons

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

2015 ◽  
Vol 107 (21) ◽  
pp. 211109 ◽  
Author(s):  
R. Ivanov ◽  
S. Marcinkevičius ◽  
Y. Zhao ◽  
D. L. Becerra ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Carrier Localization

Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
Yong-Hoon Cho ◽  
T. J. Schmidt ◽  
S. Bidnyk ◽  
J.J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Stokes Shift ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Recombination Lifetime ◽  
Si Doping

AbstractWe have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1 -μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm-3) to ∼4 ns (for n = 3 x 1019 cm-3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

scholarly journals Рекомбинация и спиновая динамика экситонов в непрямозонных квантовых ямах и квантовых точках

2018 ◽  
Vol 60 (8) ◽  
pp. 1542
Author(s):  
Т.С. Шамирзаев
Keyword(s):  
Experimental Study ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Spin Dynamics ◽  
Recombination Time ◽  
Localized Excitons

AbstractThe behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.

scholarly journals Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 715-720
Author(s):  
Yong-Hoon Cho ◽  
T. J. Schmidt ◽  
S. Bidnyk ◽  
J. J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Doping Concentration ◽  
Stokes Shift ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Recombination Lifetime ◽  
Si Doping

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1-μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm−3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm−3) to ∼ 4 ns (for n = 3 × 1019 cm−3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

Interwell radiative recombination of a 2D electron gas in electrically biased double quantum wells

1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

2007 ◽  
Vol 49 (6) ◽  
pp. 1175-1183 ◽  
Author(s):  
V. F. Agekyan ◽  
I. Akai ◽  
N. N. Vasil’ev ◽  
T. Karasawa ◽  
G. Karczewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Optically Active ◽  
Manganese Ions
Sign in / Sign up

Export Citation Format

Share Document