Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

Jiri Thoma; Baolai Liang; Liam Lewis; Stephen P. Hegarty; Guillaume Huyet; Diana L. Huffaker

doi:10.1063/1.4795866

Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

Applied Physics Letters ◽

10.1063/1.4795866 ◽

2013 ◽

Vol 102 (11) ◽

pp. 113101 ◽

Cited By ~ 7

Author(s):

Jiri Thoma ◽

Baolai Liang ◽

Liam Lewis ◽

Stephen P. Hegarty ◽

Guillaume Huyet ◽

...

Keyword(s):

Quantum Wells ◽

Annealing Effect ◽

Carrier Localization

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In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.12.006 ◽

2004 ◽

Vol 263 (1-4) ◽

pp. 171-175 ◽

Cited By ~ 8

Author(s):

H.F. Liu ◽

S. Karirinne ◽

C.S. Peng ◽

T. Jouhti ◽

J. Konttinen ◽

...

Keyword(s):

Quantum Wells ◽

Structural Properties ◽

Annealing Effect ◽

Near Surface

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In situ investigation of annealing effect on lamellar stacking structure of polyethylene thin films by synchrotron grazing-incidence small-angle and wide-angle X-ray scattering

Journal of Applied Crystallography ◽

10.1107/s002188980700578x ◽

2007 ◽

Vol 40 (s1) ◽

pp. s642-s644 ◽

Cited By ~ 15

Author(s):

Sono Sasaki ◽

Hiroyasu Masunaga ◽

Hiroo Tajiri ◽

Katsuaki Inoue ◽

Hiroshi Okuda ◽

...

Keyword(s):

Thin Films ◽

Small Angle ◽

Grazing Incidence ◽

Annealing Effect ◽

Wide Angle ◽

X Ray ◽

X Ray Scattering ◽

In Situ Investigation ◽

Stacking Structure

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Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Applied Physics Letters ◽

10.1063/1.5002104 ◽

2017 ◽

Vol 111 (11) ◽

pp. 113501 ◽

Cited By ~ 37

Author(s):

Christina M. Jones ◽

Chu-Hsiang Teng ◽

Qimin Yan ◽

Pei-Cheng Ku ◽

Emmanouil Kioupakis

Keyword(s):

Numerical Simulations ◽

Quantum Wells ◽

Light Emitting Diodes ◽

Carrier Localization ◽

Light Emitting ◽

Ingan Quantum Wells

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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

Journal of Applied Physics ◽

10.1063/1.4866815 ◽

2014 ◽

Vol 115 (8) ◽

pp. 083112 ◽

Cited By ~ 38

Author(s):

Zhi Li ◽

Junjie Kang ◽

Bo Wei Wang ◽

Hongjian Li ◽

Yu Hsiang Weng ◽

...

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Green Light ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Carrier Localization ◽

Light Emitting

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Evidence of Trion and Carrier Localization in Modulation Doped Quantum Wells by fs and ps FWM Studies

Springer Series in Chemical Physics - Ultrafast Phenomena XI ◽

10.1007/978-3-642-72289-9_76 ◽

1998 ◽

pp. 254-256

Author(s):

P. Gilliot ◽

D. Brinkmann ◽

J. Kudrna ◽

B. Hönerlage ◽

A. Arnoult ◽

...

Keyword(s):

Quantum Wells ◽

Carrier Localization

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In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy

Brazilian Journal of Physics ◽

10.1590/s0103-97332002000200031 ◽

2002 ◽

Vol 32 (2a) ◽

pp. 359-361

Author(s):

S. Martini ◽

A. A. Quivy

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam

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In situ curvature monitoring for metal–organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.09.070 ◽

2011 ◽

Vol 315 (1) ◽

pp. 1-4 ◽

Cited By ~ 27

Author(s):

Masakazu Sugiyama ◽

Kenichi Sugita ◽

Yunpeng Wang ◽

Yoshiaki Nakano

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Organic Vapor ◽

Metal Organic

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Interface Roughness, Carrier Localization, and Wave Function Overlap in c -Plane (In,Ga)N/GaN Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhomogeneities, and Coulomb Effects

Physical Review Applied ◽

10.1103/physrevapplied.10.034027 ◽

2018 ◽

Vol 10 (3) ◽

Cited By ~ 11

Author(s):

Daniel S. P. Tanner ◽

Joshua M. McMahon ◽

Stefan Schulz

Keyword(s):

Wave Function ◽

Quantum Wells ◽

Interface Roughness ◽

Carrier Localization ◽

Structural Inhomogeneities ◽

Alloy Microstructure ◽

Coulomb Effects

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Annealing effect in InAs/GaAs multiple quantum wells grown on variously oriented substrates

Applied Surface Science ◽

10.1016/0169-4332(93)90129-y ◽

1993 ◽

Vol 68 (2) ◽

pp. 251-255 ◽

Cited By ~ 1

Author(s):

Jeong-Sik Lee ◽

Kazuhiro Kudo ◽

Yunosuke Makita ◽

Akimasa Yamada ◽

Shigeru Niki ◽

...

Keyword(s):

Quantum Wells ◽

Annealing Effect ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical Review B ◽

10.1103/physrevb.95.125314 ◽

2017 ◽

Vol 95 (12) ◽

Cited By ~ 28

Author(s):

M. Shahmohammadi ◽

W. Liu ◽

G. Rossbach ◽

L. Lahourcade ◽

A. Dussaigne ◽

...

Keyword(s):

Quantum Wells ◽

Auger Recombination ◽

Carrier Localization

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