scholarly journals Interface Roughness, Carrier Localization, and Wave Function Overlap in c -Plane (In,Ga)N/GaN Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhomogeneities, and Coulomb Effects

2018 ◽  
Vol 10 (3) ◽  
Author(s):  
Daniel S. P. Tanner ◽  
Joshua M. McMahon ◽  
Stefan Schulz
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Carrier Localization ◽  
Structural Inhomogeneities ◽  
Alloy Microstructure ◽  
Coulomb Effects

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Evidence of Interface Roughness Correlation in CdTe/(Cd, Zn)Te Quantum Wells

1996 ◽  
pp. 275-277
Author(s):  
E. J. Mayer ◽  
N. T. Pelekanos ◽  
J. Kuhl ◽  
N. Magnea ◽  
H. Mariette
Keyword(s):  
Quantum Wells ◽  
Interface Roughness

scholarly journals Mobility Enhancement in Square Quantum Wells: Symmetric Modulation of the Envelop Wave Function

2010 ◽  
Vol 20 (3) ◽  
pp. 193
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong ◽  
Tran Thi Hai
Keyword(s):  
Experimental Data ◽  
Wave Function ◽  
Low Temperature ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Variational Approach ◽  
Theoretical Study ◽  
Recent Experimental Data ◽  
Carrier Distribution ◽  
Analytic Expressions

We present a theoretical study of the effects from symmetric modulation of the envelop wave function on quantum transport in square quantum wells (QWs). Within the variational approach we obtain analytic expressions for the carrier distribution and their scattering in symmetric two-side doped square QWs. Roughness-induced scattering are found significantly weaker than those in the asymmetric one-side doped counterpart. Thus, we propose symmetric modulation of the wave function as an efficient method for enhancement of the roughness-limited QW mobility. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in two-side doped square QWs, e.g., the mobility dependence on the channel width, which have not been explained so far.

Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy

1989 ◽  
Vol 55 (1) ◽  
pp. 50-52 ◽  
Author(s):  
Ch. Maierhofer ◽  
S. Munnix ◽  
D. Bimberg ◽  
R. K. Bauer ◽  
D. E. Mars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Rates ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Trap Concentration

scholarly journals Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

2000 ◽  
Vol 61 (15) ◽  
pp. 10322-10329 ◽  
Author(s):  
K. Leosson ◽  
J. R. Jensen ◽  
W. Langbein ◽  
J. M. Hvam
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Exciton Localization

Theoretical investigation of impurity scattering limited mobility in quantum wells: The influence of wave‐function modeling

1993 ◽  
Vol 73 (1) ◽  
pp. 233-238 ◽  
Author(s):  
J. L. Thobel ◽  
L. Baudry ◽  
F. Dessenne ◽  
M. Charef ◽  
R. Fauquembergue
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Theoretical Investigation ◽  
Impurity Scattering ◽  
Limited Mobility
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