scholarly journals Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

2017 ◽  
Vol 111 (11) ◽  
pp. 113501 ◽  
Author(s):  
Christina M. Jones ◽  
Chu-Hsiang Teng ◽  
Qimin Yan ◽  
Pei-Cheng Ku ◽  
Emmanouil Kioupakis
Keyword(s):  
Numerical Simulations ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Carrier Localization ◽  
Light Emitting ◽  
Ingan Quantum Wells

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

2011 ◽  
Author(s):  
Hongping Zhao ◽  
Jing Zhang ◽  
Guangyu Liu ◽  
Takahiro Toma ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells
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