Correlation between carrier localization, optical, and structural properties in multilayered GaN/Al0.5Ga0.5N quantum wells with an ultrathin inserted Al0.5Ga0.5N layer

2010 ◽  
Vol 107 (8) ◽  
pp. 086102
Author(s):  
Young S. Park ◽  
Yongmin Kim ◽  
Hyunsik Im
Keyword(s):  
Quantum Wells ◽  
Structural Properties ◽  
Carrier Localization

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

Evidence of Trion and Carrier Localization in Modulation Doped Quantum Wells by fs and ps FWM Studies

1998 ◽  
pp. 254-256
Author(s):  
P. Gilliot ◽  
D. Brinkmann ◽  
J. Kudrna ◽  
B. Hönerlage ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Localization

scholarly journals Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface

2014 ◽  
Vol 126 (5) ◽  
pp. 1184-1186 ◽  
Author(s):  
G.V. Klimko ◽  
E.A. Evropeytsev ◽  
A.A. Sitnikova ◽  
S.V. Gronin ◽  
I.V. Sedova ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Structural Properties

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

2006 ◽  
Vol 515 (2) ◽  
pp. 786-789 ◽  
Author(s):  
L. Borkovska ◽  
O. Yefanov ◽  
O. Gudymenko ◽  
S. Johnson ◽  
V. Kladko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Structural Properties ◽  
Growth Temperature

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

2017 ◽  
Vol 95 (12) ◽  
Author(s):  
M. Shahmohammadi ◽  
W. Liu ◽  
G. Rossbach ◽  
L. Lahourcade ◽  
A. Dussaigne ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Carrier Localization

scholarly journals Carrier localization effect in polarized InGaN multiple quantum wells

2005 ◽  
Vol 2 (7) ◽  
pp. 2753-2756 ◽  
Author(s):  
A. ?ukauskas ◽  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
J. Mickevi?ius ◽  
S. Jur??nas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Localization Effect
Sign in / Sign up

Export Citation Format

Share Document