scholarly journals Schottky-barrier-induced spin relaxation in spin injection

2005 ◽  
Vol 72 (15) ◽  
Author(s):  
Y. Y. Wang ◽  
M. W. Wu
Keyword(s):  
Schottky Barrier ◽  
Spin Relaxation ◽  
Spin Injection

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

Magneto-optical spectroscopy of spin injection and spin relaxation in ZnMnSe/ZnCdSe and GaMnN/InGaN spin light-emitting structures

2007 ◽  
Vol 204 (1) ◽  
pp. 159-173 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
Y. Oka ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Optical Spectroscopy ◽  
Spin Relaxation ◽  
Spin Injection ◽  
Light Emitting

Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs

2009 ◽  
Vol 106 (4) ◽  
pp. 043515 ◽  
Author(s):  
Eunsoon Oh ◽  
T. K. Lee ◽  
J. H. Park ◽  
J. H. Choi ◽  
Y. J. Park ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Carrier Lifetime ◽  
Spin Injection ◽  
Spin Relaxation Time ◽  
Time Study ◽  
Electrical Spin

scholarly journals Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
André Dankert ◽  
Ravi S. Dulal ◽  
Saroj P. Dash
Keyword(s):  
Schottky Barrier ◽  
Spin Injection

scholarly journals Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

2012 ◽  
Vol 101 (2) ◽  
pp. 023102 ◽  
Author(s):  
C. Ojeda-Aristizabal ◽  
M. S. Fuhrer ◽  
N. P. Butch ◽  
J. Paglione ◽  
I. Appelbaum
Keyword(s):  
Schottky Barrier ◽  
Topological Insulators ◽  
Spin Injection

scholarly journals Spintronics in Two-Dimensional Materials

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Jiahong Zhong ◽  
Junnan Ding ◽  
Zhiming M. Wang ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
High Efficiency ◽  
2D Materials ◽  
Spin Injection ◽  
Transition Metal Dichalcogenides ◽  
Information Storage ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Metal Dichalcogenides

AbstractSpintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin–valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

scholarly journals Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

2003 ◽  
Vol 82 (23) ◽  
pp. 4092-4094 ◽  
Author(s):  
A. T. Hanbicki ◽  
O. M. J. van ’t Erve ◽  
R. Magno ◽  
G. Kioseoglou ◽  
C. H. Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Process ◽  
Spin Injection
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