scholarly journals Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
André Dankert ◽  
Ravi S. Dulal ◽  
Saroj P. Dash
Keyword(s):  
Schottky Barrier ◽  
Spin Injection

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

2020 ◽  
Vol 11 (4) ◽  
pp. 1466-1472 ◽  
Author(s):  
Qijing Wang ◽  
Sai Jiang ◽  
Bowen Zhang ◽  
Eul-Yong Shin ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Access Resistance

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Role of the i-Layer Thickness in the Performance of a-Si:H Schottky Barrier Photodiodes

2002 ◽  
Vol 230-232 ◽  
pp. 587-590
Author(s):  
Hugo Águas ◽  
Elvira Fortunato ◽  
Luís Pereira ◽  
V. Silva ◽  
Rodrigo Martins
Keyword(s):  
Schottky Barrier ◽  
Layer Thickness
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