Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs

2009 ◽  
Vol 106 (4) ◽  
pp. 043515 ◽  
Author(s):  
Eunsoon Oh ◽  
T. K. Lee ◽  
J. H. Park ◽  
J. H. Choi ◽  
Y. J. Park ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Carrier Lifetime ◽  
Spin Injection ◽  
Spin Relaxation Time ◽  
Time Study ◽  
Electrical Spin

Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

2010 ◽  
Vol 22 (22) ◽  
pp. 1689-1691 ◽  
Author(s):  
Nobuhide Yokota ◽  
Kazuhiro Ikeda ◽  
Yoshitaka Nishizaki ◽  
Shinji Koh ◽  
Hitoshi Kawaguchi
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Carrier Lifetime ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation

Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress

2016 ◽  
Vol 39 ◽  
pp. 34-42 ◽  
Author(s):  
Joydeep Ghosh ◽  
Dmitry Osintsev ◽  
V. Sverdlov ◽  
Siegfried Selberherr
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Spin Injection ◽  
Silicon Film ◽  
Uniaxial Stress ◽  
Spin Relaxation Time ◽  
Electron Spin Relaxation ◽  
Spin Properties ◽  
Spin Lifetime

The electron spin properties of semiconductors are of immense interest for their potential in spin-driven applications. Silicon is a perfect material for spintronics due to a long spin lifetime. Understanding the peculiarities of the subband structure and details of spin propagation in thin silicon films in the presence of the spin-orbit interaction is under scrutiny. We have performed simulations to obtain the surface roughness limited, acoustic-and optical-phonon mediated spin relaxation time, when the film is under shear strain. The degeneracy between the non-equivalent valleys is lifted by strain, which in turn subdues the dominating inter-valley relaxation components and increases the spin lifetime. We also elaborate on the injection orientation sensitive spin relaxation model and predict that the spin relaxation time is maximum, when the spin is injected in-plane, relative to the (001) oriented silicon film.

scholarly journals Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells

2017 ◽  
Vol 121 (20) ◽  
pp. 205703 ◽  
Author(s):  
S. Ullah ◽  
G. M. Gusev ◽  
A. K. Bakarov ◽  
F. G. G. Hernandez
Keyword(s):  
Relaxation Time ◽  
Quantum Wells ◽  
Spin Relaxation ◽  
Spin Relaxation Time ◽  
Donor States

Changes of spin–spin relaxation time for EPR composites during mixing process

1986 ◽  
Vol 31 (8) ◽  
pp. 2661-2666 ◽  
Author(s):  
Motonobu Furuta ◽  
Tadashi Hikasa ◽  
Eiichi Kato
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Spin Relaxation Time ◽  
Mixing Process

Proton spin-spin relaxation time of peel and flesh of navel orange varieties exposed to freezing temperature

2005 ◽  
Vol 85 (14) ◽  
pp. 2482-2486 ◽  
Author(s):  
Prem N Gambhir ◽  
Young J Choi ◽  
David C Slaughter ◽  
James F Thompson ◽  
Michael J McCarthy
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Freezing Temperature ◽  
Proton Spin ◽  
Spin Relaxation Time ◽  
Navel Orange

scholarly journals Spin–Spin Relaxation Time of Water Protons in κ-Carrageenan Gel

1986 ◽  
Vol 18 (11) ◽  
pp. 891-893 ◽  
Author(s):  
Kunio Hikichi ◽  
Masayuki Tokita ◽  
Satoshi Nakatsuka
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Spin Relaxation Time
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