scholarly journals Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

2003 ◽  
Vol 82 (23) ◽  
pp. 4092-4094 ◽  
Author(s):  
A. T. Hanbicki ◽  
O. M. J. van ’t Erve ◽  
R. Magno ◽  
G. Kioseoglou ◽  
C. H. Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Process ◽  
Spin Injection

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

scholarly journals Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
André Dankert ◽  
Ravi S. Dulal ◽  
Saroj P. Dash
Keyword(s):  
Schottky Barrier ◽  
Spin Injection

scholarly journals Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

2012 ◽  
Vol 101 (2) ◽  
pp. 023102 ◽  
Author(s):  
C. Ojeda-Aristizabal ◽  
M. S. Fuhrer ◽  
N. P. Butch ◽  
J. Paglione ◽  
I. Appelbaum
Keyword(s):  
Schottky Barrier ◽  
Topological Insulators ◽  
Spin Injection

scholarly journals ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES

2007 ◽  
Vol 21 (23) ◽  
pp. 1509-1529
Author(s):  
ŁUKASZ CYWIŃSKI ◽  
HANAN DERY ◽  
PARIN DALAL ◽  
L. J. SHAM
Keyword(s):  
Schottky Barrier ◽  
Bound States ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Logic Gate ◽  
Scattering Problem ◽  
Memory Cell ◽  
Planar Geometry ◽  
Magnetic Memory ◽  
Spin Accumulation

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

2011 ◽  
Vol 248 (10) ◽  
pp. 2300-2304 ◽  
Author(s):  
Saroj Prasad Dash ◽  
Heinz Dieter Carstanjen
Keyword(s):  
Schottky Barrier ◽  
Spin Injection ◽  
Stages Of Growth

Spin-dependent electron transport in ferromagnet/semiconductor Schottky barrier structures

2000 ◽  
Vol 614 ◽  
Author(s):  
Atsufumi Hirohata ◽  
Yong-Bing Xu ◽  
Christian M. Guertler ◽  
J. Anthony ◽  
C. Bland ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
High Efficiency ◽  
Electron Tunneling ◽  
Spin Injection ◽  
Polarized Light ◽  
Film Plane ◽  
Circularly Polarized Light ◽  
Spin Polarized

ABSTRACTClear evidence for high efficiency spin-polarized electron transport across ferromagnet/semiconductor Schottky barrier interfaces was observed in Ni80Fe20/GaAs structures. Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane. At negative bias, an almost constant difference between the helicity-dependent photocurrent obtained for the magnetization parallel and perpendicular to the photon helicity was detected. An effective asymmetry, A, was also estimated from the helicity-dependent photocurrent difference, attributed to spin-polarized electron tunneling from GaAs to NiFe (spin filtering). A decreases with increasing photon energy, which is consistent with the energy-dependence of the asymmetry of photoexcited electrons in GaAs. Weak spin injection from NiFe to GaAs was seen at a bias corresponding to the Schottky barrier height, which is likely to occur via a ballistic process.

scholarly journals Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure

2010 ◽  
Vol 59 (12) ◽  
pp. 8856
Author(s):  
Xiu Ming-Xia ◽  
Ren Jun-Feng ◽  
Wang Yu-Mei ◽  
Yuan Xiao-Bo ◽  
Hu Gui-Chao
Keyword(s):  
Schottky Barrier ◽  
Organic Semiconductor ◽  
Spin Injection ◽  
Semiconductor Structure
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