scholarly journals Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

2012 ◽  
Vol 101 (2) ◽  
pp. 023102 ◽  
Author(s):  
C. Ojeda-Aristizabal ◽  
M. S. Fuhrer ◽  
N. P. Butch ◽  
J. Paglione ◽  
I. Appelbaum
Keyword(s):  
Schottky Barrier ◽  
Topological Insulators ◽  
Spin Injection

Room temperature spin injection into SiC via Schottky barrier

2018 ◽  
Vol 113 (22) ◽  
pp. 222402 ◽  
Author(s):  
L. Huang ◽  
H. Wu ◽  
P. Liu ◽  
X. M. Zhang ◽  
B. S. Tao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Spin Injection

Spintronics Based on Topological Insulators

SPIN ◽  
2016 ◽  
Vol 06 (02) ◽  
pp. 1640001 ◽  
Author(s):  
Yabin Fan ◽  
Kang L. Wang
Keyword(s):  
Topological Insulators ◽  
Spin Injection ◽  
Surface States ◽  
Research Field ◽  
Spin Torque ◽  
Spin Orbit ◽  
Challenges And Opportunities ◽  
Potential Applications ◽  
Topological Surface ◽  
A Charge

Spintronics using topological insulators (TIs) as strong spin–orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin–orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin–torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

scholarly journals Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
André Dankert ◽  
Ravi S. Dulal ◽  
Saroj P. Dash
Keyword(s):  
Schottky Barrier ◽  
Spin Injection

scholarly journals Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

2003 ◽  
Vol 82 (23) ◽  
pp. 4092-4094 ◽  
Author(s):  
A. T. Hanbicki ◽  
O. M. J. van ’t Erve ◽  
R. Magno ◽  
G. Kioseoglou ◽  
C. H. Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Process ◽  
Spin Injection

scholarly journals ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES

2007 ◽  
Vol 21 (23) ◽  
pp. 1509-1529
Author(s):  
ŁUKASZ CYWIŃSKI ◽  
HANAN DERY ◽  
PARIN DALAL ◽  
L. J. SHAM
Keyword(s):  
Schottky Barrier ◽  
Bound States ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Logic Gate ◽  
Scattering Problem ◽  
Memory Cell ◽  
Planar Geometry ◽  
Magnetic Memory ◽  
Spin Accumulation

We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation.

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

2011 ◽  
Vol 248 (10) ◽  
pp. 2300-2304 ◽  
Author(s):  
Saroj Prasad Dash ◽  
Heinz Dieter Carstanjen
Keyword(s):  
Schottky Barrier ◽  
Spin Injection ◽  
Stages Of Growth

Spin-dependent electron transport in ferromagnet/semiconductor Schottky barrier structures

2000 ◽  
Vol 614 ◽  
Author(s):  
Atsufumi Hirohata ◽  
Yong-Bing Xu ◽  
Christian M. Guertler ◽  
J. Anthony ◽  
C. Bland ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
High Efficiency ◽  
Electron Tunneling ◽  
Spin Injection ◽  
Polarized Light ◽  
Film Plane ◽  
Circularly Polarized Light ◽  
Spin Polarized

ABSTRACTClear evidence for high efficiency spin-polarized electron transport across ferromagnet/semiconductor Schottky barrier interfaces was observed in Ni80Fe20/GaAs structures. Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane. At negative bias, an almost constant difference between the helicity-dependent photocurrent obtained for the magnetization parallel and perpendicular to the photon helicity was detected. An effective asymmetry, A, was also estimated from the helicity-dependent photocurrent difference, attributed to spin-polarized electron tunneling from GaAs to NiFe (spin filtering). A decreases with increasing photon energy, which is consistent with the energy-dependence of the asymmetry of photoexcited electrons in GaAs. Weak spin injection from NiFe to GaAs was seen at a bias corresponding to the Schottky barrier height, which is likely to occur via a ballistic process.

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