Electronic structure of silicon oxynitride: Ab-initio and experimental study, comparison with silicon nitride

2011 ◽  
Vol 110 (11) ◽  
pp. 114103 ◽  
Author(s):  
S. S. Nekrashevich ◽  
V. A. Gritsenko
2019 ◽  
Vol 124 (1) ◽  
pp. 82-89 ◽  
Author(s):  
Chun-Xiang Wang ◽  
Yong Li ◽  
Zhi-Feng Li ◽  
Zhi-Jun Liu ◽  
Edward F. Valeev ◽  
...  

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
M. U. González-Rivas ◽  
M. A. Ortiz-Medrano ◽  
G. Herrera-Pérez ◽  
G. G. Carbajal-Arízaga ◽  
R. Flores-Moreno ◽  
...  

2004 ◽  
Vol 83 (10) ◽  
pp. 2449-2454 ◽  
Author(s):  
Rachid Belkada ◽  
Toshiya Shibayanagi ◽  
Masaaki Naka ◽  
Masanori Kohyama

2012 ◽  
Vol 63 ◽  
pp. 163-167 ◽  
Author(s):  
M.V. Lalić ◽  
Z.S. Popović ◽  
F.R. Vukajlović

2009 ◽  
Vol 609 ◽  
pp. 239-242
Author(s):  
A.E. Merad ◽  
M.B. Kanoun

The Cr2AlC and V2AlC nanolayered ternary carbides are studied by performing APW-lo ab initio total energy calculations within the recent Wu-Cohen generalized gradient approximation GGA. Using full relaxation procedure of the volume and the atomic positions we obtained the structural parameters and electronic structure of the optimization hexagonal. Results were compared with the experimental ones. Interesting features are deduced. In fact, we have shown why these materials are conductors.


2002 ◽  
Vol 91 (3) ◽  
pp. 363-368 ◽  
Author(s):  
V. Van Speybroeck ◽  
M. Waroquier ◽  
Y. Martelé ◽  
E. Schacht

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