Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

2013 ◽  
Vol 102 (1) ◽  
pp. 012107 ◽  
Author(s):  
Philipp Studer ◽  
Steven R. Schofield ◽  
Cyrus F. Hirjibehedin ◽  
Neil J. Curson
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Structural And Electronic Properties ◽  
Ion Implanted

Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures

MRS Bulletin ◽  
1997 ◽  
Vol 22 (8) ◽  
pp. 22-26 ◽  
Author(s):  
Edward T. Yu
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Material Properties ◽  
Semiconductor Heterostructures ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy ◽  
Cross Sectional

As characteristic dimensions in semiconductor devices continue to shrink and as advanced heterostructure devices increase in prominence, the ability to characterize structure and electronic properties in semiconductor materials and device structures at the atomic to nanometer scales has come to be of outstanding and immediate importance. Phenomena such as atomic-scale roughness of heterojunction interfaces, compositional ordering in semiconductor alloys, discreteness and spatial distribution of dopant atoms, and formation of self-assembled nanoscale structures can exert a profound influence on material properties and device behavior. The relationships between atomic-scale structure, epitaxial growth or processing conditions, and ultimately material properties and device behavior must be understood for realization and effective optimization of a wide range of semiconductor heterostructure and nanoscale devices.Cross-sectional scanning tunneling microscopy (STM) has emerged as a unique and powerful tool in the study of atomic-scale properties in III-V compound semiconductor heterostructures and of nanometer-scale structure and electronic properties in Si micro-electronic devices, offering unique capabilities for characterization that in conjunction with a variety of other, complementary experimental methods are providing new and important insights into material and device properties at the atomic to nanometer scale. In this article, we describe the basic experimental techniques involved in cross-sectional STM and give a few representative applications from our work that illustrate the ability, using cross-sectional STM in conjunction with other experimental techniques, to probe atomic-scale features in the structure of semiconductor heterojunctions and to correlate these features with epitaxial-growth conditions and device behavior.

Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy

1993 ◽  
Vol 63 (9) ◽  
pp. 1273-1275 ◽  
Author(s):  
M. B. Johnson ◽  
U. Maier ◽  
H.‐P. Meier ◽  
H. W. M. Salemink
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals N−nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

2020 ◽  
Vol 102 (12) ◽  
Author(s):  
D. Tjeertes ◽  
T. J. F. Verstijnen ◽  
A. Gonzalo ◽  
J. M. Ulloa ◽  
M. S. Sharma ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

scholarly journals Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
Li Gao
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
Silicon Dioxide ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Crucial Role ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Device Applications

AbstractAtomic scale investigations of the electronic properties of graphene are playing a crucial role in understanding and tuning the exotic properties of this material for its potential device applications. Scanning tunneling microscopy (STM) and spectroscopy (STS) are unique techniques for atomic scale investigations and have been extensively used in graphene research. In this article, we review recent progresses in STM and STS studies of the electronic properties of suspended graphene as well as graphene supported by different substrates including graphite, metals, silicon carbide, silicon dioxide and boron nitride.

Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

1995 ◽  
Vol 378 ◽  
Author(s):  
X. Liu ◽  
E. R. Weber ◽  
D. F. Ogletree ◽  
M. Salmeron ◽  
T. Slupinski
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Single Crystals ◽  
Spectroscopic Studies ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Group V ◽  
Imaging Results ◽  
The Difference

AbstractWe report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

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