Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

2012 ◽  
Vol 1430 ◽  
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Hall Effect ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hall Effect Measurement ◽  
Field Effect Mobility ◽  
Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

2011 ◽  
Vol 679-680 ◽  
pp. 678-681 ◽  
Author(s):  
Harsh Naik ◽  
T. Paul Chow
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Gate Oxides ◽  
Electron Transport Properties

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

2009 ◽  
Vol 615-617 ◽  
pp. 785-788 ◽  
Author(s):  
Harsh Naik ◽  
K. Tang ◽  
T. Marron ◽  
T. Paul Chow ◽  
Jody Fronheiser
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Threshold Voltage ◽  
Hall Mobility ◽  
Field Effect ◽  
Gate Oxide ◽  
Subthreshold Slope ◽  
Field Effect Mobility

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.

scholarly journals Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique

2013 ◽  
Vol 46 (4) ◽  
pp. 908-911 ◽  
Author(s):  
Kamran Ali ◽  
Ullrich Pietsch ◽  
Souren Grigorian
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Field Effect Mobility ◽  
Structural Anisotropy ◽  
Coating Method ◽  
Parallel Direction ◽  
Dip Coating Method ◽  
Dip Coating Technique

Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edge-on conformation compared with those in the parallel direction; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 773-776 ◽  
Author(s):  
Harsh Naik ◽  
K. Tang ◽  
T. Paul Chow
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Threshold Voltage ◽  
Hall Mobility ◽  
Field Effect ◽  
Gate Oxide ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
Inversion Channel

The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.

Electronic transport properties of carbon and boron nitride chain heterojunctions

2017 ◽  
Vol 5 (5) ◽  
pp. 1165-1178 ◽  
Author(s):  
Yi Zhou ◽  
Yifan Li ◽  
Jie Li ◽  
Jichen Dong ◽  
Hui Li
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Free Standing ◽  
Electronic Transport Properties ◽  
Carbon Chains ◽  
On Chip ◽  
Transport Channels

Long, stable, and free-standing linear atomic carbon chains and boron nitride (BN) chains have been carved out from their 2D sheets recently [Meyer et al., Nature, 2008, 454(7202), 319; Jin et al. Phys. Rev. Lett., 2009, 102(20), 205501; Cretu et al., ACS Nano, 2014, 8(12), 11950], which could be used as transport channels or on-chip interconnects for field-effect transistors.

scholarly journals Role of Layer Thickness and Field-Effect Mobility on Photoresponsivity of Indium Selenide (InSe) Based Phototransistors

2021 ◽  
Author(s):  
Milinda Wasala ◽  
Prasanna Patil ◽  
Sujoy Ghosh ◽  
Lincoln Weber ◽  
Sidong Lei ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Laser Source ◽  
Field Effect Mobility ◽  
Structure Property ◽  
Active Layers ◽  
Wide Range ◽  
Conductive Channel ◽  
Channel Thickness

Abstract Understanding and optimizing the properties of photoactive two-dimensional (2D) Van der Waals solids is crucial for developing optoelectronics applications. The main goal of this work is to present a detailed investigation of layer dependent photoconductive behavior of InSe based field-effect transistors (FETs). InSe based FETs with five different channel thicknesses (t, 20nm < t < 100nm) were investigated with a continuous laser source of λ = 658 nm (1.88 eV) over a wide range of illumination power (P) of 22.8 nW < P < 1.29 μW. All the devices studied showed signatures of photogating; however, our investigations suggest that the photoresponsivities are strongly dependent on the thickness of the conductive channel. A correlation between the field-effect mobility (µFE) values (as a function of channel thickness, t) and photoresponsivity (R) indicates that in general R increases with increasing µFE (decreasing t) and vice versa. Maximum responsivities of ∼ 7.84 A/W and ∼ 0.59 A/W were obtained the devices with t = 20nm and t = 100nm, respectively. These values could substantially increase under the application of a gate voltage. The structure-property correlation-based studies presented here indicate the possibility of tuning the optical properties of InSe based photo-FETs for a variety of applications related to photodetector and/or active layers in solar cells.

Hall Effect and Magnetoresistance in Undoped Poly(3 Hexylthiophene)

1989 ◽  
Vol 173 ◽  
Author(s):  
Azar Assadi ◽  
Christer Svensson ◽  
Magnus Willander
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Hall Mobility ◽  
Field Effect ◽  
Transverse Magnetic ◽  
Field Effect Mobility ◽  
Transverse Magnetoresistance ◽  
Hall Effect Measurements ◽  
Effect Transistor ◽  
Van Der Pauw

ABSTRACTWe report studies of transport properties of thin films of undoped poly(3-hexylthiophene) (P3HT) fabricated by spinning a polymer solution onto oxidised silicon or glass. The film thicknesseswere on the order of 1000 Å. We studied magnetoresistance, the effect of magnetic field on field effect mobility and Hall effect.Transverse magnetoresistance was measured on films on glass. A positive anomalous magnetoresistance with a saturation value of about 0.1 % was found. Transverse magnetoresistance was also studied by measuring the change of a field effect mobility with magnetic field. This measurement was performed using the field effect transistor structure. An initial mobility of 6.5 × 10−5 cm2/Vs was reduced by about 15 % in a transverse magnetic field.We also carried out Hall effect measurements on films on glass using a Van der Pauw contact configuration. The measured Hall mobility was 2.17 × 10−5 cm2/Vs. Finally we measured the temperature dependence of the Hall mobility and found it follow the exp(T-l/4) law of variable range hopping.

EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE

2009 ◽  
Vol 19 (01) ◽  
pp. 161-166
Author(s):  
HARSH NAIK ◽  
KE TANG ◽  
T. PAUL CHOW
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Threshold Voltage ◽  
Hall Mobility ◽  
Field Effect ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Plasma Enhanced Cvd ◽  
And Inversion

We have fabricated, characterized and compared the performance of lateral n -channel 4 H - SiC MOSFETs on (000-1) oriented substrates, using two different gate oxide processes. These processes include low-temperature deposited oxide and plasma-enhanced CVD oxide. Different MOSFET parameters, such as field-effect mobility, threshold voltage, Hall mobility and inversion sheet carrier concentration has been compared for the two processes.

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