Thermal Equilibrium Kinetics of Interacting Point Defects

1964 ◽  
Vol 134 (1A) ◽  
pp. A241-A246 ◽  
Author(s):  
C. P. Flynn
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Kinetics Of

Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Ulrich Gösele ◽  
Werner Frank
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Diffusion Mechanism ◽  
Extended Defects ◽  
Basic Point ◽  
Kinetics Of Oxidation ◽  
Diffusion Phenomena ◽  
Frame Work ◽  
Oxygen Precipitates ◽  
Kinetics Of

ABSTRACTThe paper introduces the basic point-defect models proposed for silicon, which involve either vacancies or self-interstitials only, or both types of point defects simultaneously under thermal-equilibrium conditions. The growth and shrinkage kinetics of oxidation-induced stacking faults as well as oxidation-enhanced or -retarded diffusion phenomena are discussed within the frame work of these models. Whereas no unambiguous conclusions on the dominant diffusion mechanism can be drawn from the available oxidation-related experiments, recent investigations on so-called anomalous diffusion phenomena (e.g., the ‘emitter-push effect’) and on the diffusion of gold in silicon demonstrate Si self-interstitials to be the point defects governing self- and impurity diffusion. The possibility of a coexistence of vacancies and self-interstitials in thermal equilibrium is discussed in this context. The paper concludes with speculations on how carbon in conjunction with self-interstitials may influence the nucleation process of oxygen precipitates in silicon.

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

Atomistic Simulations of Point Defect Properties in Silicon

1992 ◽  
Vol 278 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Robert A. Brown
Keyword(s):  
Distribution Function ◽  
Point Defects ◽  
Thermal Equilibrium ◽  
Harmonic Approximation ◽  
Reference State ◽  
Atomistic Simulations ◽  
Free Energies ◽  
Systematic Analysis ◽  
Equilibrium Concentrations ◽  
Cumulant Analysis

AbstractA systematic analysis based on atomistic simulations is presented for the calculation of energies and equilibrium concentrations of intrinsic point defects in silicon. Calculation of Gibbs free energies is based on the quasi-harmonic approximation for the reference state and the cumulant analysis of the enthalpy distribution function from Monte Carlo simulations in the reference state. Results are presented for the temperature dependence of enthalpies, volumes, and free energies of formation and thermal equilibrium concentrations of vacancies and self-interstitials.

The stress-driven redistribution of point defects in the vicinity of crack-like singularities

1990 ◽  
Vol 427 (1872) ◽  
pp. 1-23 ◽  
Keyword(s):  
Steady State ◽  
Stress Field ◽  
Grain Boundary ◽  
Point Defect ◽  
Slip Band ◽  
Point Defects ◽  
Elastic Interaction ◽  
Mode Ii ◽  
Fracture Of Materials ◽  
Kinetics Of

The most important term in the energy of the elastic interaction between a crack and a point defect is presented and used to estimate the kinetics of redistribution of point defects in the stress field of an isolated crack under mode II load and a slip band impinging against a grain boundary sink. Our analyses show that the point defects should migrate only to the tip of the crack, whereas they should enter both into the slip band tip and along the adjacent boundary interface. Explicit results are obtained for the concentrations, the number and flux distributions as well as the total numbers segregated in the transient depletion and the steady-state irradiation situation and serve to reinforce previous conclusions regarding the importance of such stress-driven processes in the fracture of materials.

Creep and diffusion Transitory creep and equilibrium kinetics of population of point defects in Co1-xO

1982 ◽  
Vol 46 (6) ◽  
pp. 869-880 ◽  
Author(s):  
A. Dominguez-rodriguez ◽  
C. Monty ◽  
J. Philibert
Keyword(s):  
Point Defects ◽  
Kinetics Of ◽  
And Diffusion
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