scholarly journals On the nature of thermal equilibrium point defects in Si: Are the thermal equilibrium point defects in Si crystals Frenkel pairs or Schottky defects?

2017 ◽  
Vol 56 (4) ◽  
pp. 048005 ◽  
Author(s):  
Masashi Suezawa ◽  
Yoshiaki Iijima ◽  
Ichiro Yonenaga
Keyword(s):  
Equilibrium Point ◽  
Point Defects ◽  
Thermal Equilibrium

Atomistic Simulations of Point Defect Properties in Silicon

1992 ◽  
Vol 278 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Robert A. Brown
Keyword(s):  
Distribution Function ◽  
Point Defects ◽  
Thermal Equilibrium ◽  
Harmonic Approximation ◽  
Reference State ◽  
Atomistic Simulations ◽  
Free Energies ◽  
Systematic Analysis ◽  
Equilibrium Concentrations ◽  
Cumulant Analysis

AbstractA systematic analysis based on atomistic simulations is presented for the calculation of energies and equilibrium concentrations of intrinsic point defects in silicon. Calculation of Gibbs free energies is based on the quasi-harmonic approximation for the reference state and the cumulant analysis of the enthalpy distribution function from Monte Carlo simulations in the reference state. Results are presented for the temperature dependence of enthalpies, volumes, and free energies of formation and thermal equilibrium concentrations of vacancies and self-interstitials.

Equilibrium point defects in intermetallics with theB2 structure: NiAl and FeAl

1993 ◽  
Vol 48 (9) ◽  
pp. 6712-6715 ◽  
Author(s):  
C. L. Fu ◽  
Y.-Y. Ye ◽  
M. H. Yoo ◽  
K. M. Ho
Keyword(s):  
Equilibrium Point ◽  
Point Defects

Equilibrium point defects in TiAl studied by PAC

1993 ◽  
Vol 79 (1-4) ◽  
pp. 745-748 ◽  
Author(s):  
Jiawen Fan ◽  
Gary S. Collins
Keyword(s):  
Equilibrium Point ◽  
Point Defects

The Influence of Point Defects on Diffusion and Gettering in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
U. Gösele ◽  
T. Y. Tan
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Nucleation And Growth ◽  
Impurity Diffusion ◽  
Intrinsic Point Defects ◽  
Different Types ◽  
Equilibrium Concentrations ◽  
Metallic Impurities

ABSTRACTIn a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second partwe discuss the influence of point defects on the diffusion and precipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO2 precipitates.

Sign in / Sign up

Export Citation Format

Share Document