Theoretical Study of Impact of Internal and External Stresses on Thermal Equilibrium Concentrations of Intrinsic Point Defects in Doped Si Crystals

2017 ◽  
Vol 6 (1) ◽  
pp. P78-P99 ◽  
Author(s):  
Koji Kobayashi ◽  
Shunta Yamaoka ◽  
Koji Sueoka
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Theoretical Study ◽  
Intrinsic Point Defects ◽  
External Stresses ◽  
Equilibrium Concentrations

The Influence of Point Defects on Diffusion and Gettering in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
U. Gösele ◽  
T. Y. Tan
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Nucleation And Growth ◽  
Impurity Diffusion ◽  
Intrinsic Point Defects ◽  
Different Types ◽  
Equilibrium Concentrations ◽  
Metallic Impurities

ABSTRACTIn a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second partwe discuss the influence of point defects on the diffusion and precipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO2 precipitates.

Atomistic Simulations of Point Defect Properties in Silicon

1992 ◽  
Vol 278 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Robert A. Brown
Keyword(s):  
Distribution Function ◽  
Point Defects ◽  
Thermal Equilibrium ◽  
Harmonic Approximation ◽  
Reference State ◽  
Atomistic Simulations ◽  
Free Energies ◽  
Systematic Analysis ◽  
Equilibrium Concentrations ◽  
Cumulant Analysis

AbstractA systematic analysis based on atomistic simulations is presented for the calculation of energies and equilibrium concentrations of intrinsic point defects in silicon. Calculation of Gibbs free energies is based on the quasi-harmonic approximation for the reference state and the cumulant analysis of the enthalpy distribution function from Monte Carlo simulations in the reference state. Results are presented for the temperature dependence of enthalpies, volumes, and free energies of formation and thermal equilibrium concentrations of vacancies and self-interstitials.

scholarly journals Diffusion Engineering by Carbon in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
Ulrich Goesele ◽  
Pierre Laveant ◽  
Rene Scholz ◽  
Norbert Engler ◽  
Peter Werner
Keyword(s):  
Point Defects ◽  
Crystalline Silicon ◽  
Bipolar Transistor ◽  
Precipitation Behavior ◽  
High Concentration ◽  
Intrinsic Point Defects ◽  
Influence Diffusion ◽  
Carbon Precipitation ◽  
Equilibrium Concentrations ◽  
Diffusion Mechanisms

AbstractThe possibility to suppress undesirable diffusion of the base dopant boron in siliconbased bipolar transistor structures by the incorporation of a high concentration of carbon has lead to renewed interest in the behavior of carbon in crystalline silicon. The present paper will review essential features of carbon in silicon including solubility, diffusion mechanisms and precipitation behavior. Based on this information the possibilities to use carbon to influence diffusion of dopants in silicon by the introduction of non-equilibrium concentrations of intrinsic point defects will be discussed as well as the reason for the relatively high resilience against carbon precipitation. Interactions between carbon and oxygen will be mentioned, especially in the context of an as yet unexplained fast out-diffusion of carbon close to the surface.

Dislocation Locking by Intrinsic Point Defects in Silicon

2001 ◽  
Vol 673 ◽  
Author(s):  
Igor V. Peidous ◽  
Konstantin V. Loiko ◽  
Dale A. Simpson ◽  
Tony La ◽  
William R. Frensley
Keyword(s):  
Point Defects ◽  
Stress Reduction ◽  
Theoretical Calculations ◽  
Elastic Interaction ◽  
Stress Fields ◽  
Intrinsic Point Defects ◽  
Silicon Structures ◽  
External Stresses ◽  
Dislocation Stress ◽  
Dislocation Pileups

ABSTRACTDislocation pileups with abnormally weak inter-dislocation repulsion have been observed in locally oxidized silicon structures. To verify if this could be attributed to elastic interaction of dislocations with intrinsic point defects, distributions of self-interstitials in dislocation stress fields have been studied using theoretical calculations and computer simulations. According to the obtained results, self-interstitials can form atmospheres about dislocations causing dislocation stress reduction and therefore screening of dislocations from interaction with external stresses. This may represent an additional mechanism of dislocation locking in silicon alternative to oxygen pinning.

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