Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

2021 ◽  
Vol 118 (9) ◽  
pp. 093503
Author(s):  
Fuqiang Guo ◽  
Sen Huang ◽  
Xinhua Wang ◽  
Tiantian Luan ◽  
Wen Shi ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Interface States ◽  
Remote Plasma ◽  
Gan Heterostructure

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics

2010 ◽  
Vol 13 (9) ◽  
pp. G71 ◽  
Author(s):  
Hyung-Suk Jung ◽  
Jung-Min Park ◽  
Hyo Kyeom Kim ◽  
Jeong Hwan Kim ◽  
Seok-Jun Won ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Temperature Instability ◽  
Bias Temperature Instability

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

2018 ◽  
Vol 112 (23) ◽  
pp. 233504 ◽  
Author(s):  
Xue-Feng Zheng ◽  
Shuai-Shuai Dong ◽  
Peng Ji ◽  
Chong Wang ◽  
Yun-Long He ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Interface States ◽  
Gan Heterostructure

Low-temperature Si in-situ cleaning and homoepitaxy by remote plasma-enhanced chemical vapor deposition

1990 ◽  
Author(s):  
Ting-Chen Hsu ◽  
Brian G. Anthony ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong
Keyword(s):  
Gate Dielectric ◽  
Defect Density ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
High Quality ◽  
Hot Carrier ◽  
Thermal Oxide ◽  
State Generation

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

2016 ◽  
Vol 387 ◽  
pp. 274-279 ◽  
Author(s):  
Meng-Chen Tsai ◽  
Min-Hung Lee ◽  
Chin-Lung Kuo ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K
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