In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

2016 ◽  
Vol 387 ◽  
pp. 274-279 ◽  
Author(s):  
Meng-Chen Tsai ◽  
Min-Hung Lee ◽  
Chin-Lung Kuo ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

2020 ◽  
Vol 109 ◽  
pp. 104933
Author(s):  
Kuei-Wen Huang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Sheng-Han Yi ◽  
Chin-I. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High K

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

2019 ◽  
Vol 1 (7) ◽  
pp. 1091-1098 ◽  
Author(s):  
Teng-Jan Chang ◽  
Wei-Hao Lee ◽  
Chin-I Wang ◽  
Sheng-Han Yi ◽  
Yu-Tung Yin ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

2009 ◽  
Vol 45 (11) ◽  
pp. 570 ◽  
Author(s):  
S. Abermann ◽  
G. Pozzovivo ◽  
J. Kuzmik ◽  
C. Ostermaier ◽  
C. Henkel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Collapse ◽  
Layer Deposition ◽  
High K ◽  
Pre Treatment

In-situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces

2007 ◽  
Vol 996 ◽  
Author(s):  
Min Dai ◽  
Jinhee Kwon ◽  
Ming-Tsung Ho ◽  
Yu Wang ◽  
Sandrine Rivillon ◽  
...  
Keyword(s):  
Growth Rate ◽  
Ir Spectroscopy ◽  
Metal Oxides ◽  
Infrared Absorption ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Chemical Functionalization ◽  
Layer Deposition ◽  
High K

AbstractThe nature of the interface between Si and Ge substrates and high-k dielectrics often controls the performance of MOSFET devices. Precleaning and/or chemical functionalization of the surfaces can dramatically affect the formation of an interfacial layer. We have used in-situ IR spectroscopy to probe the relevant interfaces during ALD growth for a variety of surface treatments, including H- and Cl-termination, and nitridation. This paper focuses on understanding of the mechanisms for interfacial SiO2 (or GeOx) formation during HfO2 growth using tetrakis-ethylmethylamidohafnium (TEMAH) as the metal precursor and water or ozone as the oxygen precursor. We find that impurities arising from incomplete ligand elimination during growth (e.g. OH for H2O processing and CO- and NO-containing species for O3 processing) are incorporated into the HfO2 film during growth. Upon annealing, most of these species react, but can also migrate to the interface. Nitridation of Si and Ge surfaces will in general prevent SiO2 or GeOx formation but can also affect the growth rate.

2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

2013 ◽  
Vol 534 ◽  
pp. 482-487 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
L. Bailón ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Irradiation Effects ◽  
High K

In-Line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer CVD

2003 ◽  
Vol 150 (9) ◽  
pp. F169 ◽  
Author(s):  
H. De Witte ◽  
S. Passefort ◽  
W. Besling ◽  
J. W. H. Maes ◽  
K. Eason ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

2018 ◽  
Vol 443 ◽  
pp. 421-428 ◽  
Author(s):  
Yu-Shu Lin ◽  
Po-Hsien Cheng ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Functionalization ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric
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