Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

2018 ◽  
Vol 112 (23) ◽  
pp. 233504 ◽  
Author(s):  
Xue-Feng Zheng ◽  
Shuai-Shuai Dong ◽  
Peng Ji ◽  
Chong Wang ◽  
Yun-Long He ◽  
...  
Keyword(s):  
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Interface States ◽  
Gan Heterostructure

scholarly journals Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

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pp. 1-6
Author(s):  
Matthias L. Vermeer ◽  
Raymond J. E. Hueting ◽  
Luca Pirro ◽  
Jan Hoentschel ◽  
Jurriaan Schmitz
Keyword(s):  
Interface States ◽  
Subthreshold Current

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

2008 ◽  
Vol 5 (6) ◽  
pp. 1892-1894 ◽  
Author(s):  
B. K. Li ◽  
K. J. Chen ◽  
K. M. Lau ◽  
W. K. Ge ◽  
J. N. Wang
Keyword(s):  
Persistent Photoconductivity ◽  
Deep Centers ◽  
Gan Heterostructure
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