Growth of single‐crystalline CoSi2on (111) Si in solid phase epitaxy regime by a nonultrahigh vacuum method

1987 ◽  
Vol 50 (4) ◽  
pp. 174-176 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Vacuum Method

scholarly journals Complex Oxides: Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)

2019 ◽  
Vol 6 (18) ◽  
pp. 1970116
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Complex Oxides ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse

2019 ◽  
Vol 6 (18) ◽  
pp. 1901075 ◽  
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

Single-Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid-Phase Epitaxy

2003 ◽  
Vol 13 (2) ◽  
pp. 139-144 ◽  
Author(s):  
H. Ohta ◽  
K. Nomura ◽  
M. Orita ◽  
M. Hirano ◽  
K. Ueda ◽  
...  
Keyword(s):  
Homologous Series ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Films

scholarly journals Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates

2007 ◽  
Vol 91 (22) ◽  
pp. 223107 ◽  
Author(s):  
Yun Sung Woo ◽  
Kibum Kang ◽  
Moon-Ho Jo ◽  
Jong-Myeoung Jeon ◽  
Miyoung Kim
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Si Nanowire ◽  
Amorphous Si

Single-Crystalline Germanium Thin Films by Electrodeposition and Solid-Phase Epitaxy

2007 ◽  
Vol 10 (11) ◽  
pp. D124 ◽  
Author(s):  
Q. Huang ◽  
S. W. Bedell ◽  
K. L. Saenger ◽  
M. Copel ◽  
H. Deligianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Germanium

Reactive Solid-Phase Epitaxy: ∼ A novel growth method for single-crystalline thin films of complex oxides with superlattice structure ∼

2002 ◽  
Vol 747 ◽  
Author(s):  
H. Ohta ◽  
K. Nomura ◽  
H. Hiramatsu ◽  
T. Suzuki ◽  
K. Ueda ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Superlattice Structure ◽  
Growth Method ◽  
Natural Superlattice ◽  
Single Crystalline Film ◽  
Spe Method

ABSTRACTWe have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy

2012 ◽  
Vol 29 (3) ◽  
pp. 036102
Author(s):  
Bing Sun ◽  
Hu-Dong Chang ◽  
Li Lu ◽  
Hong-Gang Liu ◽  
De-Xin Wu
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

Single crystalline SiGe layers on Si by solid phase epitaxy

2015 ◽  
Vol 416 ◽  
pp. 34-40 ◽  
Author(s):  
R.R. Lieten ◽  
J.C. McCallum ◽  
B.C. Johnson
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline
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