Single-Crystalline Germanium Thin Films by Electrodeposition and Solid-Phase Epitaxy

2007 ◽  
Vol 10 (11) ◽  
pp. D124 ◽  
Author(s):  
Q. Huang ◽  
S. W. Bedell ◽  
K. L. Saenger ◽  
M. Copel ◽  
H. Deligianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Germanium

Reactive Solid-Phase Epitaxy: ∼ A novel growth method for single-crystalline thin films of complex oxides with superlattice structure ∼

2002 ◽  
Vol 747 ◽  
Author(s):  
H. Ohta ◽  
K. Nomura ◽  
H. Hiramatsu ◽  
T. Suzuki ◽  
K. Ueda ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Superlattice Structure ◽  
Growth Method ◽  
Natural Superlattice ◽  
Single Crystalline Film ◽  
Spe Method

ABSTRACTWe have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

scholarly journals Complex Oxides: Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)

2019 ◽  
Vol 6 (18) ◽  
pp. 1970116
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Complex Oxides ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse

2019 ◽  
Vol 6 (18) ◽  
pp. 1901075 ◽  
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Solid phase epitaxy of ferrimagnetic Y3Fe5O12 garnet thin films

2008 ◽  
Vol 93 (9) ◽  
pp. 092505 ◽  
Author(s):  
Y. Krockenberger ◽  
H. Matsui ◽  
T. Hasegawa ◽  
M. Kawasaki ◽  
Y. Tokura
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

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