scholarly journals Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates

2007 ◽  
Vol 91 (22) ◽  
pp. 223107 ◽  
Author(s):  
Yun Sung Woo ◽  
Kibum Kang ◽  
Moon-Ho Jo ◽  
Jong-Myeoung Jeon ◽  
Miyoung Kim
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Si Nanowire ◽  
Amorphous Si

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

scholarly journals Complex Oxides: Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019)

2019 ◽  
Vol 6 (18) ◽  
pp. 1970116
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Complex Oxides ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

1984 ◽  
Vol 56 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Yasuo Kunii ◽  
Michiharu Tabe ◽  
Kenji Kajiyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Facet Formation

Quasi‐Single‐Crystalline ZnGa 2 O 4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse

2019 ◽  
Vol 6 (18) ◽  
pp. 1901075 ◽  
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Single Crystalline ◽  
Deep Ultraviolet

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Hydrogen in amorphous Si and Ge during solid phase epitaxy

2010 ◽  
Vol 518 (9) ◽  
pp. 2317-2322 ◽  
Author(s):  
B.C. Johnson ◽  
P. Caradonna ◽  
D.J. Pyke ◽  
J.C. McCallum ◽  
P. Gortmaker
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si

Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

1990 ◽  
Vol 205 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. J. Eaglesham ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Solid Phase ◽  
Amorphous Material ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Small Deviations ◽  
Random Nucleation ◽  
Low Concentrations ◽  
Critical Metal ◽  
Amorphous Si

AbstractThe competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

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