Reactive Solid-Phase Epitaxy: ∼ A novel growth method for single-crystalline thin films of complex oxides with superlattice structure ∼

2002 ◽  
Vol 747 ◽  
Author(s):  
H. Ohta ◽  
K. Nomura ◽  
H. Hiramatsu ◽  
T. Suzuki ◽  
K. Ueda ◽  
...  

ABSTRACTWe have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

2007 ◽  
Vol 10 (11) ◽  
pp. D124 ◽  
Author(s):  
Q. Huang ◽  
S. W. Bedell ◽  
K. L. Saenger ◽  
M. Copel ◽  
H. Deligianni ◽  
...  

2018 ◽  
Vol 6 (16) ◽  
pp. 4464-4470 ◽  
Author(s):  
Qianrui Lv ◽  
Zhipeng Lian ◽  
Wenhui He ◽  
Jia-Lin Sun ◽  
Qiang Li ◽  
...  

A facile and general top-down strategy to fabricate hybrid perovskite single-crystalline film from its bulk single crystal is developed.


2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.


2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  

2019 ◽  
Vol 6 (18) ◽  
pp. 1970116
Author(s):  
Po‐Wei Chen ◽  
Shiau‐Yuan Huang ◽  
Shuo‐Huang Yuan ◽  
Yi‐An Chen ◽  
Po‐Wen Hsiao ◽  
...  

Author(s):  
Wioletta Dewo ◽  
Katarzyna Łuczyńska ◽  
Yuriy Zorenko ◽  
Vitaliy Gorbenko ◽  
Kacper Drużbicki ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.


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