Development of Composite Scintillators Based on the LuAG: Pr Single Crystalline Films and LuAG:Sc Single Crystals

The scintillation properties of novel type of composite scintillator based on Lu3Al5O12:Pr (LuAG:Pr) single crystalline film (SCF) and LuAG:Sc substrate grown by the liquid-phase epitaxy method are considered in this work. The registration of α-particles and γ-quanta in such types of composites occurs by means of separation of the scintillation decay kinetics of SCF and crystal parts, respectively. Namely, under excitation by α-particles of 241Am (5.5 MeV) source and γ-quanta of 137Cs (662 keV) source, the large differences in the respective scintillation decay kinetics and decay time values tα and tγ are observed for the LuAG:Pr SCF/LuAG:Sc SC composite scintillator with various film thicknesses. Furthermore, the best tγ/tα ratio above 4.5 is achieved for such types of epitaxial structure with SCF and substrate thicknesses of 17 μm and about 0.5 mm, respectively. The development types of composite scintillators can be successfully applied for simultaneous registration of α-particles and γ-quanta in the mixed radiation fluxes.

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

LPE growth of Tb3Al5O12:Ce single crystalline film converters for WLED application

The possibility of development of an efficient phosphor converters (PC) for white LED (WLED) based on single crystalline films (SCF) of Ce3+ doped Tb3Al5O12 garnet (TbAG:Ce), grown using liquid-phase epitaxy...

Luminescent and Scintillation Properties of CeAlO3 Crystals and Phase-Separated CeAlO3/CeAl11O18 Metamaterials

This work is dedicated to the growth process and investigation of luminescent and scintillation properties of CeAlO3 single crystals and CeAlO3/CeAl11O18 metamaterials under e-beam and α-particles excitation. It has been shown that cathodoluminescence and radioluminescence spectra of CeAlO3 crystals contain two bands, peaking at 440 and 500 nm, and caused by the Ce3+ 5d–4f transitions into CeAl11O18 phase, which is present in these crystals as an admixture. Under 270 nm ultraviolet (UV) light excitation, a CeAlO3 crystal possesses complicated non-exponential luminescence decay, with the average decay time of 16 ns. The light yield of CeAlO3 crystals under α-particle excitation is about 16% and 12%, in respect to the standard Bi4Ge3O12 (BGO) crystal and Y3Al5O12:Ce (YAG:Ce) single crystalline film samples, respectively. The CeAlO3 scintillation decay is quite fast, with the decay time value t1/e in the 54–56 ns range.

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

LPE growth and study of the Ce3+ incorporation in LuAlO3:Ce single crystalline film scintillators

Scheme of the absorption and emission levels of Ce3+ and Pb2+ ions in the energy band scheme of the LuAP host (a) and fragment of the LuAP structure with CeLu, CeLu–CeLu, Pb2+ and Pt3+ centers (b).

Epitaxial growth of single crystalline film scintillating screens based on Eu3+ doped RAlO3 (R = Y, Lu, Gd, Tb) perovskites

The study is dedicated to the development of scintillating screens for microimaging applications based on the single crystalline films of Eu3+-doped (Y,Lu,Gd,Tb)AlO3-mixed perovskites using the liquid phase epitaxy method.

A universal top-down approach toward thickness-controllable perovskite single-crystalline thin films

A facile and general top-down strategy to fabricate hybrid perovskite single-crystalline film from its bulk single crystal is developed.