Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p+‐Ga0.47In0.53As layer grown by molecular beam epitaxy

1982 ◽  
Vol 40 (5) ◽  
pp. 401-403 ◽  
Author(s):  
C. Y. Chen ◽  
A. Y. Cho ◽  
K. Y. Cheng ◽  
P. A. Garbinski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Diode ◽  
Fully Depleted

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Studies of Au‐GaAs (001) interfaces prepared by molecular beam epitaxy. I. Overlayer growth and Schottky barrier formation

1985 ◽  
Vol 58 (10) ◽  
pp. 3758-3765 ◽  
Author(s):  
Keisuke L. I. Kobayashi ◽  
Nozomu Watanabe ◽  
Tadashi Narusawa ◽  
Hisao Nakashima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Barrier Formation

MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors

2017 ◽  
Author(s):  
Mykyta Toporkov ◽  
Partha Mukhopadhyay ◽  
Haider Ali ◽  
Valeria Beletsky ◽  
Fikadu Alema ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Solar Blind

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

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