Control of GaAs Schottky barrier height using a thin nonstoichiometric GaAs interface layer grown by low‐temperature molecular beam epitaxy

1993 ◽  
Vol 74 (12) ◽  
pp. 7357-7363 ◽  
Author(s):  
Shinji Fujieda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Interface Layer

scholarly journals Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

Materials ◽  
2016 ◽  
Vol 9 (5) ◽  
pp. 315 ◽  
Author(s):  
Chaochao Fu ◽  
Xiangbiao Zhou ◽  
Yan Wang ◽  
Peng Xu ◽  
Ming Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation ◽  
Microwave Annealing

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

2021 ◽  
Author(s):  
Takuma Doi ◽  
Shigehisa Shibayama ◽  
Mitsuo Sakashita ◽  
Kazutoshi Kojima ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Force Microscopy ◽  
Flat Interface ◽  
Low Temperature Annealing ◽  
Atomic Force ◽  
Low Temperature Process

Abstract To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 °C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 × 10−5 Ω⋅cm2 was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 °C.

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

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