Studies of Au‐GaAs (001) interfaces prepared by molecular beam epitaxy. I. Overlayer growth and Schottky barrier formation

1985 ◽  
Vol 58 (10) ◽  
pp. 3758-3765 ◽  
Author(s):  
Keisuke L. I. Kobayashi ◽  
Nozomu Watanabe ◽  
Tadashi Narusawa ◽  
Hisao Nakashima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Barrier Formation

MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors

2017 ◽  
Author(s):  
Mykyta Toporkov ◽  
Partha Mukhopadhyay ◽  
Haider Ali ◽  
Valeria Beletsky ◽  
Fikadu Alema ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Solar Blind

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

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