Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm

1976 ◽  
Vol 28 (5) ◽  
pp. 283-285 ◽  
Author(s):  
J. J. Hsieh
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Double Heterostructure ◽  
Room Temperature Operation

Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

1990 ◽  
Vol 57 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Mitsuru Sugo ◽  
Hidefumi Mori ◽  
Masami Tachikawa ◽  
Yoshio Itoh ◽  
Mitsuo Yamamoto
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Room Temperature Operation

Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation

2001 ◽  
Vol 227-228 ◽  
pp. 595-599 ◽  
Author(s):  
S Simanowski ◽  
C Mermelstein ◽  
M Walther ◽  
N Herres ◽  
R Kiefer ◽  
...  
Keyword(s):  
Room Temperature ◽  
Layer Structure ◽  
Diode Lasers ◽  
Structure Optimization ◽  
Room Temperature Operation
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