Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

1990 ◽  
Vol 57 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Mitsuru Sugo ◽  
Hidefumi Mori ◽  
Masami Tachikawa ◽  
Yoshio Itoh ◽  
Mitsuo Yamamoto
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Room Temperature Operation

Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate

2016 ◽  
Vol 9 (6) ◽  
pp. 062701 ◽  
Author(s):  
Keiichi Matsumoto ◽  
Junya Kishikawa ◽  
Tetsuo Nishiyama ◽  
Tomokazu Kanke ◽  
Yuya Onuki ◽  
...  
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Room Temperature Operation

Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

1993 ◽  
Author(s):  
Takashi EGAWA ◽  
Yoshiaki HASEGAWA ◽  
Tsunemasa DEGUCHI ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation
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