Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
1999 ◽
Vol 38
(Part 1, No. 1B)
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pp. 605-607
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1996 ◽
Vol 35
(Part 2, No. 2A)
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pp. L150-L153
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1985 ◽
Vol 32
(11)
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pp. 2540-2540
1997 ◽
Vol 175-176
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pp. 359-364
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2008 ◽
Vol 47
(11)
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pp. 8430-8433
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1984 ◽
Vol 23
(Part 2, No. 2)
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pp. L94-L96
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1985 ◽
Vol 24
(Part 2, No. 2)
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pp. L73-L75
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