Study of Ga2O3 deposition by MOCVD

Growth of Ga2O3 by metalorganic chemical vapour deposition in horizontal flow reactor from trimethylgallium (TMG) and oxygen is studied in a wide temperature range. The growth rate is directly proportional to TMG flow, weakly affected by O2 flow and non-monotonically depends on temperature. Growth rate over 3 μm/h is demonstrated, indicating that TMG can be used for growth of β-Ga2O3 thick layers for device applications.

Sensing and electrocatalytic activity of tungsten disulphide thin films fabricated via metalorganic chemical vapour deposition

The unique structural and electronic properties of transition metal dichalcogenides (TMDs) and in particular tungsten disulphide (WS2) makes it interesting for a variety of applications such as electrocatalytic hydrogen evolution...

Особенности роста гетероструктур нитрида галлия на подложках кремния: управляемая пластическая деформация

Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Substrate plastic deformations that occur during the growth process with the effective compressive stresses accumulation in the film were observed at temperatures of 930oC-975oC. An approach of silicon controlled plastic deformation by high-temperature annealing combined with the in situ SiNx layer growth after heterostructure epitaxy is proposed. This approach would simplify optimization of the gallium nitride heterostructures architecture for various technological tasks.

Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented.

Мощностные характеристики нитрид-галлиевых СВЧ-транзисторов на подложках кремния

In this study, nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Transistors with a 1.32-mm periphery were fabricated based on them. The saturation power of transistors at a frequency of 1 GHz amounted to 4 W and 6.3 W at a supply voltage of 30 V and 60 V, respectively. The maximum drain efficiency was 57%.

Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition.