Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE

B. I. Miller; J. H. McFee; R. J. Martin; P. K. Tien

doi:10.1063/1.90186

Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE

Applied Physics Letters ◽

10.1063/1.90186 ◽

1978 ◽

Vol 33 (1) ◽

pp. 44-47 ◽

Cited By ~ 52

Author(s):

B. I. Miller ◽

J. H. McFee ◽

R. J. Martin ◽

P. K. Tien

Keyword(s):

Room Temperature ◽

Double Heterostructure ◽

Lattice Matched ◽

Room Temperature Operation

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MP-B4 room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double heterostructure lasers grown by MBE

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1978.19295 ◽

1978 ◽

Vol 25 (11) ◽

pp. 1343-1343

Author(s):

B.I. Miller ◽

J.H. McFee ◽

R.J. Martin ◽

P.K. Tien

Keyword(s):

Room Temperature ◽

Double Heterostructure ◽

Lattice Matched ◽

Room Temperature Operation

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Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

Applied Physics Letters ◽

10.1063/1.88832 ◽

1976 ◽

Vol 28 (9) ◽

pp. 501-503 ◽

Cited By ~ 70

Author(s):

A. Y. Cho ◽

R. W. Dixon ◽

H. C. Casey ◽

R. L. Hartman

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Room Temperature Operation

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Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

Applied Physics Letters ◽

10.1063/1.103608 ◽

1990 ◽

Vol 57 (6) ◽

pp. 593-595 ◽

Cited By ~ 45

Author(s):

Mitsuru Sugo ◽

Hidefumi Mori ◽

Masami Tachikawa ◽

Yoshio Itoh ◽

Mitsuo Yamamoto

Keyword(s):

Room Temperature ◽

Si Substrate ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Room Temperature Operation

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Properties of double heterostructure injection lasers: Continuous room-temperature operation

10.1109/iedm.1970.188310 ◽

1970 ◽

Author(s):

M.B. Panish ◽

I. Hayashi ◽

F.K. Reinhart

Keyword(s):

Room Temperature ◽

Double Heterostructure ◽

Injection Lasers ◽

Room Temperature Operation

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Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.97471 ◽

1986 ◽

Vol 49 (17) ◽

pp. 1051-1052 ◽

Cited By ~ 46

Author(s):

T. H. Chiu ◽

W. T. Tsang ◽

J. A. Ditzenberger ◽

J. P. van der Ziel

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Room Temperature Operation

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Strained layer and lattice matched transverse junction stripe quantum well lasers for continuous room temperature operation

Superlattices and Microstructures ◽

10.1016/0749-6036(88)90246-7 ◽

1988 ◽

Vol 4 (4-5) ◽

pp. 603-608 ◽

Cited By ~ 3

Author(s):

R.M. Kolbas ◽

Y.J. Yang ◽

K.Y. Hsieh

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Quantum Well Lasers ◽

Strained Layer ◽

Lattice Matched ◽

Room Temperature Operation

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Room‐temperature operation of optically pumped InGaAsSb/AlGaAsSb double‐heterostructure laser at ≂2 μm

Applied Physics Letters ◽

10.1063/1.96285 ◽

1985 ◽

Vol 47 (2) ◽

pp. 111-113 ◽

Cited By ~ 13

Author(s):

B. V. Dutt ◽

H. Temkin ◽

E. D. Kolb ◽

W. A. Sunder

Keyword(s):

Room Temperature ◽

Optically Pumped ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Room Temperature Operation

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Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm

Applied Physics Letters ◽

10.1063/1.88736 ◽

1976 ◽

Vol 28 (5) ◽

pp. 283-285 ◽

Cited By ~ 144

Author(s):

J. J. Hsieh

Keyword(s):

Room Temperature ◽

Diode Lasers ◽

Double Heterostructure ◽

Room Temperature Operation

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Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90085 ◽

1978 ◽

Vol 32 (7) ◽

pp. 406-407 ◽

Cited By ~ 43

Author(s):

R. D. Dupuis ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper)

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1977.18921 ◽

1977 ◽

Vol 24 (9) ◽

pp. 1195-1196 ◽

Cited By ~ 4

Author(s):

R.D. Dupuis ◽

P.D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Double Heterostructure ◽

Metalorganic Chemical ◽

Room Temperature Operation

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