Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

1985 ◽  
Vol 47 (10) ◽  
pp. 1031-1033 ◽  
Author(s):  
T. H. Windhorn ◽  
G. M. Metze
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Si Substrate ◽  
Room Temperature Operation

Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate

2016 ◽  
Vol 9 (6) ◽  
pp. 062701 ◽  
Author(s):  
Keiichi Matsumoto ◽  
Junya Kishikawa ◽  
Tetsuo Nishiyama ◽  
Tomokazu Kanke ◽  
Yuya Onuki ◽  
...  
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Room Temperature Operation

Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

1990 ◽  
Vol 57 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Mitsuru Sugo ◽  
Hidefumi Mori ◽  
Masami Tachikawa ◽  
Yoshio Itoh ◽  
Mitsuo Yamamoto
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Room Temperature Operation

Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation

2001 ◽  
Vol 227-228 ◽  
pp. 595-599 ◽  
Author(s):  
S Simanowski ◽  
C Mermelstein ◽  
M Walther ◽  
N Herres ◽  
R Kiefer ◽  
...  
Keyword(s):  
Room Temperature ◽  
Layer Structure ◽  
Diode Lasers ◽  
Structure Optimization ◽  
Room Temperature Operation

Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

1993 ◽  
Author(s):  
Takashi EGAWA ◽  
Yoshiaki HASEGAWA ◽  
Tsunemasa DEGUCHI ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Room Temperature ◽  
Cavity Surface ◽  
Si Substrate ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m

2007 ◽  
Vol 19 (20) ◽  
pp. 1628-1630 ◽  
Author(s):  
M. Mehta ◽  
A. Jallipalli ◽  
J. Tatebayashi ◽  
M. N. Kutty ◽  
A. Albrecht ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Room Temperature Operation

cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

1983 ◽  
Vol 42 (11) ◽  
pp. 937-939 ◽  
Author(s):  
R. D. Burnham ◽  
C. Lindström ◽  
T. L. Paoli ◽  
D. R. Scifres ◽  
W. Streifer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Room Temperature Operation
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