Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module

1994 ◽  
Author(s):  
A. M. Bayoumi ◽  
J. Montgomery ◽  
R. T. Kuehn ◽  
F. S. Johnson ◽  
John R. Hauser
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Stack ◽  
Thermal Budget ◽  
Processing Module ◽  
Low Thermal Budget ◽  
Mos Gate ◽  
Cluster Tool

Low thermal budget in situ cleaning and passivation for silicon epitaxy in a multichamber rapid thermal processing cluster tool

1994 ◽  
Vol 21 (2) ◽  
pp. 137-141 ◽  
Author(s):  
Mahesh K. Sanganeria ◽  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
C.Archie Lee ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Budget ◽  
Silicon Epitaxy ◽  
Low Thermal Budget ◽  
Cluster Tool

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

1997 ◽  
Vol 470 ◽  
Author(s):  
G. Lucovsky ◽  
B. Hinds
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Kinetic Effects ◽  
C 30 ◽  
Thin Gate Oxide ◽  
Low Thermal Budget

ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

Beyond Thermal Budget: Using D · t In Kinetic Optimization Of RTP

1998 ◽  
Vol 525 ◽  
Author(s):  
R. Ditchfield ◽  
E. G. Seebauer
Keyword(s):  
Thermal Processing ◽  
Program Design ◽  
Rapid Thermal Processing ◽  
Dopant Diffusion ◽  
Thermal Budget ◽  
Microelectronic Fabrication ◽  
Kinetic Effects ◽  
Rigorous Method

ABSTRACTRapid thermal processing (RTP) has found continually increasing use for oxidation, silicidation, CVD, and other steps in microelectronic fabrication. Kinetic effects in rapid thermal processing (RTP) are often assessed using the concept of thermal budget, with the idea that low thermal budgets should minimize dopant diffusion and interface degradation. Some definitions of budget employ the product of temperature and time (T-t). In previous work, we have shown that this definition for budget often leads to qualitatively incorrect conclusions regarding heating program design. However, other definitions of budget employ the product of diffusivity and time (D-t), where the diffusivity describes unwanted diffusion or interface degradation. Here we show that minimization of D-t by itself is insufficient to kinetically optimize a heating program; account must be taken of the relative rates of the desired and undesired phenomena. We present a straightforward but rigorous method for doing so.

Commercial RTP-A SEMATECH Perspective

1996 ◽  
Vol 429 ◽  
Author(s):  
Tony Speranza ◽  
Terry Riley ◽  
Arun Nanda ◽  
Burt Fowler ◽  
Kenneth Torres ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Semiconductor Manufacturing ◽  
Rapid Thermal Processing ◽  
Component Technology ◽  
Tool Development ◽  
Productivity Improvement ◽  
The Past ◽  
Vertical Furnace ◽  
Cluster Tool

AbstractThis paper discusses various commercial aspects of Rapid Thermal Processing (RTP). It provides an overview of SEMATECH's efforts to improve the manufacturing viability of RTP. Over the past several years SEMATECH, a U.S. Government/Industry consortium, has identified thermal equipment and processing needs relating to semiconductor manufacturing. It has aggressively pursued solutions to these needs through specific equipment projects. These projects include: RTP Installed Base Productivity Improvement, 0.25um RTP Tool Development, and RTP Modeling and Component Technology. Also discussed are several thermal projects which focus on the performance of more traditional tools. A comparison between RTP and a vertical furnace with model based process control and a small batch fast ramp furnace is made. A brief discussion of an RTP gate stack cluster tool project is followed by a review of future thermal processing needs, including 300mm.

scholarly journals Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

2015 ◽  
Vol 3 (3) ◽  
pp. 297-301 ◽  
Author(s):  
Joo Hyon Noh ◽  
Pooran C. Joshi ◽  
Teja Kuruganti ◽  
Philip D. Rack
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Thin Film Transistors ◽  
Thermal Budget ◽  
Low Thermal Budget
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