MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Karsten Rojek; Roland Schmechel; Niels Benson

doi:10.1063/1.5090947

MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Applied Physics Letters ◽

10.1063/1.5090947 ◽

2019 ◽

Vol 114 (15) ◽

pp. 152104

Author(s):

Karsten Rojek ◽

Roland Schmechel ◽

Niels Benson

Keyword(s):

Semiconductor Device ◽

Current Method ◽

Thermally Stimulated Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Journal of Electronic Materials ◽

10.1007/s11664-006-0007-2 ◽

2007 ◽

Vol 36 (6) ◽

pp. 648-653 ◽

Cited By ~ 19

Author(s):

S. S. Hullavarad ◽

D. E. Pugel ◽

E. B. Jones ◽

R. D. Vispute ◽

T. Venkatesan

Keyword(s):

Leakage Current ◽

Semiconductor Device ◽

Breakdown Strength ◽

Pulsed Laser ◽

Current Transport ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Leakage ◽

Low Leakage Current ◽

Device Structures

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Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Applied Physics Letters ◽

10.1063/1.4901747 ◽

2014 ◽

Vol 105 (19) ◽

pp. 193502 ◽

Cited By ~ 25

Author(s):

Yiren Chen ◽

Hang Song ◽

Hong Jiang ◽

Zhiming Li ◽

Zhiwei Zhang ◽

...

Keyword(s):

Resistive Switching ◽

Semiconductor Device ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials ◽

10.1007/s11664-997-0153-1 ◽

1997 ◽

Vol 26 (3) ◽

pp. 212-216 ◽

Cited By ~ 10

Author(s):

C. C. Tin ◽

Y. Song ◽

T. Isaacs Smith ◽

V. Madangakli ◽

T. S. Sudarshan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications ◽

Metalorganic Chemical

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Facile synthetic route to implement a fully bendable organic metal–insulator–semiconductor device on polyimide sheet

Organic Electronics ◽

10.1016/j.orgel.2012.01.007 ◽

2012 ◽

Vol 13 (5) ◽

pp. 721-732 ◽

Cited By ~ 6

Author(s):

Jagan Singh Meena ◽

Min-Ching Chu ◽

Chung-Shu Wu ◽

Jie-Chian Liang ◽

Yu-Cheng Chang ◽

...

Keyword(s):

Semiconductor Device ◽

Organic Metal ◽

Synthetic Route ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Displacement current measurement of a pentacene metal–insulator–semiconductor device to investigate both quasi-static and dynamic carrier behavior using a combined waveform

Organic Electronics ◽

10.1016/j.orgel.2011.06.002 ◽

2011 ◽

Vol 12 (9) ◽

pp. 1560-1565 ◽

Cited By ~ 24

Author(s):

Yuya Tanaka ◽

Yutaka Noguchi ◽

Michael Kraus ◽

Wolfgang Brütting ◽

Hisao Ishii

Keyword(s):

Semiconductor Device ◽

Current Measurement ◽

Displacement Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Ion beam techniques combining insulator deposition and hydrogen plasma etching for III–V compound metal/insulator/semiconductor device applications

Thin Solid Films ◽

10.1016/0040-6090(83)90437-6 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 211-219 ◽

Cited By ~ 5

Author(s):

C. Sibran ◽

R. Blanchet ◽

M. Garrigues ◽

P. Viktorovitch

Keyword(s):

Plasma Etching ◽

Semiconductor Device ◽

Ion Beam ◽

Hydrogen Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications

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Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Materials ◽

10.3390/ma5030404 ◽

2012 ◽

Vol 5 (12) ◽

pp. 404-414 ◽

Cited By ~ 13

Author(s):

Wipakorn Jevasuwan ◽

Yuji Urabe ◽

Tatsuro Maeda ◽

Noriyuki Miyata ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Semiconductor Device ◽

Atomic Layer ◽

Formation Mechanisms ◽

Device Performance ◽

Interface Formation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique

Microelectronic Engineering ◽

10.1016/j.mee.2016.02.047 ◽

2016 ◽

Vol 157 ◽

pp. 46-51 ◽

Cited By ~ 5

Author(s):

Mariusz Sochacki ◽

Krystian Krol ◽

Michal Waskiewicz ◽

Katarzyna Racka ◽

Jan Szmidt

Keyword(s):

Interface Traps ◽

Thermally Stimulated Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Mis Structures

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Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device

Journal of Applied Physics ◽

10.1063/5.0002126 ◽

2020 ◽

Vol 128 (7) ◽

pp. 074503

Author(s):

V. Mikhelashvili ◽

Y. Shneider ◽

G. Eisenstein

Keyword(s):

Semiconductor Device ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage

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GERMANIUM–BASED METAL–INSULATOR–SEMICONDUCTOR TRANSISTORS AS A WAY OF FURTHER DEVELOPMENT OF CMOS TECHNOLOGY

Автометрия ◽

10.15372/aut20160501 ◽

2016 ◽

Keyword(s):

Cmos Technology ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Further Development

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