Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device

2020 ◽  
Vol 128 (7) ◽  
pp. 074503
Author(s):  
V. Mikhelashvili ◽  
Y. Shneider ◽  
G. Eisenstein
Keyword(s):  
Semiconductor Device ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Current Voltage

An analysis of field-induced hot-electron emission from metal-insulator microstructures on broad-area high-voltage electrodes

1986 ◽  
Vol 403 (1825) ◽  
pp. 285-311 ◽  
Keyword(s):  
Electron Emission ◽  
Voltage Characteristic ◽  
Spectral Shape ◽  
Hot Electron ◽  
Current Voltage Characteristic ◽  
Broad Area ◽  
Metal Insulator ◽  
Resolution Electron ◽  
Current Voltage ◽  
Vacuum Gap

High-resolution electron energy distribution measurements of individual microscopic sites have been used to develop a detailed theoretical model of the field-induced hot-electron emission mechanism responsible for pre-breakdown currents at vacuum-gap fields of 10-30 MV m -1 . The model, which is based on the formation of conducting channels in a metal-insulator-vacuum (m. i. v.) micro-emission régime, has provided experimentally verified quantitative relations for the current-voltage characteristic, spectral shape, and the field-dependence of the spectral full width at half maximum (f. w. h. m.) and shift.

Electrophysical Characteristics of Tantalum Oxide Structures

2020 ◽  
Vol 22 (8) ◽  
pp. 433-437
Author(s):  
V.S. Belov ◽  
◽  
Keyword(s):  
Tantalum Oxide ◽  
Atomic Layer ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Metal Insulator ◽  
Potential Barriers ◽  
Insulator Interface ◽  
Layer Deposition ◽  
Current Voltage ◽  
Tantalum Oxide Film

In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.

Development and Current-Voltage Characteristic of Arc on AMF Contacts at Different Opening Speeds

2021 ◽  
pp. 1-7
Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage

Current oscillations and N-shaped current–voltage characteristic in the manganite Sm1−xSrxMnO3

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova
Keyword(s):  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Current Oscillations
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