Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique

2016 ◽  
Vol 157 ◽  
pp. 46-51 ◽  
Author(s):  
Mariusz Sochacki ◽  
Krystian Krol ◽  
Michal Waskiewicz ◽  
Katarzyna Racka ◽  
Jan Szmidt
Keyword(s):  
Interface Traps ◽  
Thermally Stimulated Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

Dynamics of Metal-SiOx and SiOx–Si Interfaces and the Associated Instabilities In Practical Metal/Insulator/Semiconductor Structures

1982 ◽  
Vol 18 ◽  
Author(s):  
G. Rajeswaran ◽  
W. A. Anderson ◽  
M. Jackson ◽  
M. Thayer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Quantitative Information ◽  
Charge Balance ◽  
Oxide Interface ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Barrier Heights ◽  
Thickness Variations ◽  
Mis Structures

X-ray photoelectron spectroscopy, Auger electron spectroscopy and ellipsometry measurements were performed at Cr-SiOx, and Yb-SiOx interfaces, which are being considered for metal/insulator/semiconductor (MIS) solar cell applications. These measurements have led to a knowledge of instability mechanisms associated with MIS solar cells. The dynamics of the metal-oxide interface reduce the effective thickness of the insulating SiOx layer. Typically, in a 3 week period after fabrication the oxide thickness decreases by about 2 Å for ytterbium MIS structures and by less than 1 Å for chromium MIS structures. A structural equilibrium is reached thereafter. To explore further the dependence of MIS Schottky barrier heights on oxide thickness variations (from about 5 to 20 Å) a comprehensive charge balance analysis was performed at a general MIS interface. This theoretical study supports experimental data on barrier heights and also on instabilities. In addition, the application of the theoretical model to the experimental barrier heights has yielded quantitative information regarding the density of interface states at the SiOx,–Si interface.

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

2009 ◽  
Vol 106 (4) ◽  
pp. 044506 ◽  
Author(s):  
Noriyuki Taoka ◽  
Toyoji Yamamoto ◽  
Masatomi Harada ◽  
Yoshimi Yamashita ◽  
Naoharu Sugiyama ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Interface Traps ◽  
Semiconductor Interface ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures

2001 ◽  
Vol 35 (9) ◽  
pp. 1063-1071 ◽  
Author(s):  
G. L. Kuryshev ◽  
A. P. Kovchavtsev ◽  
N. A. Valisheva
Keyword(s):  
Electronic Properties ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers

2011 ◽  
Vol 109 (8) ◽  
pp. 084508 ◽  
Author(s):  
Noriyuki Taoka ◽  
Wataru Mizubayashi ◽  
Yukinori Morita ◽  
Shinji Migita ◽  
Hiroyuki Ota ◽  
...  
Keyword(s):  
Interface Traps ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Interfacial Layers ◽  
Semiconductor Structures
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