Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Yiren Chen; Hang Song; Hong Jiang; Zhiming Li; Zhiwei Zhang; Xiaojuan Sun; Dabing Li; Guoqing Miao

doi:10.1063/1.4901747

Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Applied Physics Letters ◽

10.1063/1.4901747 ◽

2014 ◽

Vol 105 (19) ◽

pp. 193502 ◽

Cited By ~ 25

Author(s):

Yiren Chen ◽

Hang Song ◽

Hong Jiang ◽

Zhiming Li ◽

Zhiwei Zhang ◽

...

Keyword(s):

Resistive Switching ◽

Semiconductor Device ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Journal of Physics Conference Series ◽

10.1088/1742-6596/993/1/012028 ◽

2018 ◽

Vol 993 ◽

pp. 012028 ◽

Cited By ~ 3

Author(s):

M N Koryazhkina ◽

S V Tikhov ◽

A N Mikhaylov ◽

A I Belov ◽

D S Korolev ◽

...

Keyword(s):

Silicon Nitride ◽

Resistive Switching ◽

Silicon Oxide ◽

Semiconductor Nanostructures ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO2/SiC Metal-Insulator-Semiconductor Device Structures

Journal of Electronic Materials ◽

10.1007/s11664-006-0007-2 ◽

2007 ◽

Vol 36 (6) ◽

pp. 648-653 ◽

Cited By ~ 19

Author(s):

S. S. Hullavarad ◽

D. E. Pugel ◽

E. B. Jones ◽

R. D. Vispute ◽

T. Venkatesan

Keyword(s):

Leakage Current ◽

Semiconductor Device ◽

Breakdown Strength ◽

Pulsed Laser ◽

Current Transport ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Leakage ◽

Low Leakage Current ◽

Device Structures

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials ◽

10.1007/s11664-997-0153-1 ◽

1997 ◽

Vol 26 (3) ◽

pp. 212-216 ◽

Cited By ~ 10

Author(s):

C. C. Tin ◽

Y. Song ◽

T. Isaacs Smith ◽

V. Madangakli ◽

T. S. Sudarshan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications ◽

Metalorganic Chemical

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Facile synthetic route to implement a fully bendable organic metal–insulator–semiconductor device on polyimide sheet

Organic Electronics ◽

10.1016/j.orgel.2012.01.007 ◽

2012 ◽

Vol 13 (5) ◽

pp. 721-732 ◽

Cited By ~ 6

Author(s):

Jagan Singh Meena ◽

Min-Ching Chu ◽

Chung-Shu Wu ◽

Jie-Chian Liang ◽

Yu-Cheng Chang ◽

...

Keyword(s):

Semiconductor Device ◽

Organic Metal ◽

Synthetic Route ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopy

Applied Physics Letters ◽

10.1063/1.5090947 ◽

2019 ◽

Vol 114 (15) ◽

pp. 152104

Author(s):

Karsten Rojek ◽

Roland Schmechel ◽

Niels Benson

Keyword(s):

Semiconductor Device ◽

Current Method ◽

Thermally Stimulated Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Displacement current measurement of a pentacene metal–insulator–semiconductor device to investigate both quasi-static and dynamic carrier behavior using a combined waveform

Organic Electronics ◽

10.1016/j.orgel.2011.06.002 ◽

2011 ◽

Vol 12 (9) ◽

pp. 1560-1565 ◽

Cited By ~ 24

Author(s):

Yuya Tanaka ◽

Yutaka Noguchi ◽

Michael Kraus ◽

Wolfgang Brütting ◽

Hisao Ishii

Keyword(s):

Semiconductor Device ◽

Current Measurement ◽

Displacement Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

Journal of Electronic Materials ◽

10.1007/s11664-012-1912-1 ◽

2012 ◽

Vol 41 (4) ◽

pp. 656-659 ◽

Cited By ~ 8

Author(s):

R. Mahapatra ◽

A. B. Horsfall ◽

N.G. Wright

Keyword(s):

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Metal Insulator Metal

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Ion beam techniques combining insulator deposition and hydrogen plasma etching for III–V compound metal/insulator/semiconductor device applications

Thin Solid Films ◽

10.1016/0040-6090(83)90437-6 ◽

1983 ◽

Vol 103 (1-3) ◽

pp. 211-219 ◽

Cited By ~ 5

Author(s):

C. Sibran ◽

R. Blanchet ◽

M. Garrigues ◽

P. Viktorovitch

Keyword(s):

Plasma Etching ◽

Semiconductor Device ◽

Ion Beam ◽

Hydrogen Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications

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Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Materials ◽

10.3390/ma5030404 ◽

2012 ◽

Vol 5 (12) ◽

pp. 404-414 ◽

Cited By ~ 13

Author(s):

Wipakorn Jevasuwan ◽

Yuji Urabe ◽

Tatsuro Maeda ◽

Noriyuki Miyata ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Semiconductor Device ◽

Atomic Layer ◽

Formation Mechanisms ◽

Device Performance ◽

Interface Formation ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure

International Journal of Nanotechnology ◽

10.1504/ijnt.2014.059816 ◽

2014 ◽

Vol 11 (1/2/3/4) ◽

pp. 126 ◽

Cited By ~ 6

Author(s):

Sungjun Kim ◽

Sunghun Jung ◽

Byung Gook Park

Keyword(s):

Resistive Switching ◽

Silicon Structure ◽

Bipolar Resistive Switching ◽

Metal Insulator ◽

Switching Characteristics

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