scholarly journals Interplay between quantum well width and interface roughness for electron transport mobility in GaAs quantum wells

2016 ◽  
Vol 109 (23) ◽  
pp. 232105 ◽  
Author(s):  
D. Kamburov ◽  
K. W. Baldwin ◽  
K. W. West ◽  
M. Shayegan ◽  
L. N. Pfeiffer
Keyword(s):  
Electron Transport ◽  
Quantum Well ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Quantum Well Width ◽  
Transport Mobility

scholarly journals Transport properties and seebeck coefficient of the quasi-twodimensional electron gas in ALP quantum wells

2015 ◽  
Vol 18 (3) ◽  
pp. 85-92
Author(s):  
Tai Van Vo ◽  
Khanh Quoc Nguyen
Keyword(s):  
Quantum Well ◽  
Seebeck Coefficient ◽  
Quantum Wells ◽  
Local Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Parallel Magnetic Field ◽  
Local Field Correction ◽  
Quantum Well Width

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

Quantum well width dependence of exciton-phonon interaction in Cd0.33Zn0.67Te/ZnTe single quantum wells

1992 ◽  
Vol 81 (9) ◽  
pp. 801-805 ◽  
Author(s):  
J.P. Doran ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
R.D. Feldman ◽  
R.F. Austin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Single Quantum ◽  
Phonon Interaction ◽  
Quantum Well Width

Doping-Dependent Nonlinear Electron Mobility in GaAs|In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As Coupled Quantum-Well Pseudo-Morphic MODFET Structure

2020 ◽  
Vol 54 (7) ◽  
pp. 676
Author(s):  
S.R. Panda ◽  
A. Sahu ◽  
S. Das ◽  
A.K. Panda ◽  
T. Sahu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Interface Roughness ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Alloy Disorder

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility &mu; of GaAs|InxGa1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate &mu; for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as Nd1 and Nd2, respectively, we show that variation of Nd1 leads to a dip in &mu; near Nd1=Nd2, at which the resonance of the sub-band states occurs. A similar dip in &mu; as a function of Nd1 is also obtained at Nd1=Nd2 by keeping (Nd1+Nd2) unchanged. By increasing the central barrier width and well width, the dip in &mu; becomes sharp. We note that even though the overall &mu; is governed by the IMP- and AL-scatterings, the dip in &mu; is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|InxGa1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
D. K. Sengupta ◽  
S. Kim ◽  
T. Horton ◽  
H. C. Kuo ◽  
S. Thomas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Spectral Response ◽  
Interface Roughness ◽  
Scanning Tunneling ◽  
Infrared Photodetectors ◽  
Cross Sectional ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

ABSTRACTP-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

scholarly journals Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells

2003 ◽  
Vol 93 (12) ◽  
pp. 9693-9696 ◽  
Author(s):  
Yi-Yin Chung ◽  
Yen-Sheng Lin ◽  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
En-Chiang Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Annealing Effects ◽  
Quantum Well Width

scholarly journals Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

2018 ◽  
Vol 57 (2) ◽  
pp. 193-198
Author(s):  
A.A. Karpova ◽  
D.M. Samosvat ◽  
A.G. Zegrya ◽  
G.G. Zegrya ◽  
V.E. Bugrov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Electron Hole ◽  
Quantum Well Laser ◽  
Semiconductor Quantum Wells ◽  
Electron Hole Pair ◽  
Quantum Well Width ◽  
Nonequilibrium Carriers

Abstract A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

Single Quantum Well Heterostructures of MgZnO/ZnO/MgZnO on C-Plane Sapphire

2000 ◽  
Vol 623 ◽  
Author(s):  
S. Choopun ◽  
D. M. Chalk ◽  
W. Yang ◽  
R. D. Vispute ◽  
S. B. Ogale ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Reference Sample ◽  
Blue Shift ◽  
Growth Conditions ◽  
Interface Roughness ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Size ◽  
Well Model

AbstractThe single quantum well heterostructures of MgZnO/ZnO/MgZnO were grown on c-plane sapphire substrate by pulsed laser deposition. The well width was varied from 10 nm to 40 nm by controlling the deposition rate via number of laser pulsed on ZnO target. Using photoluminescence spectroscopy, we have observed a blue shift with respect to a thick ZnO reference sample when the well width was decreased. These results were fitted with calculations based on the simple square well model using the appropriate electron and holes effective masses. The quantized-energy and band offset as a function of well width, growth conditions, interface roughness, and possible quantum size effects on the quantum wells are discussed.

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