Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

2005 ◽  
Vol 240 (1-4) ◽  
pp. 375-380
Author(s):  
D.U. Lee ◽  
T.W. Kim ◽  
K.H. Yoo
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Single Quantum ◽  
Electronic Parameters ◽  
Quantum Well Width

Quantum well width dependence of exciton-phonon interaction in Cd0.33Zn0.67Te/ZnTe single quantum wells

1992 ◽  
Vol 81 (9) ◽  
pp. 801-805 ◽  
Author(s):  
J.P. Doran ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
R.D. Feldman ◽  
R.F. Austin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Single Quantum ◽  
Phonon Interaction ◽  
Quantum Well Width

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

1991 ◽  
Vol 228 ◽  
Author(s):  
S. Xin ◽  
K. F. Longenbach ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
High Growth ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Temperature Growth ◽  
Low Temperature Growth

ABSTRACTGaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.

EFFECT OF THE VOIGT MAGNETIC FIELD ON THE EXCITON COMPLEXES IN ZnSe/BeTe TYPE-II SINGLE QUANTUM WELLS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3749-3752
Author(s):  
HIROAKI YAMAMOTO ◽  
ZIWU JI ◽  
HIROFUMI MINO ◽  
RYOICHI AKIMOTO ◽  
SHOJIRO TAKEYAMA
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Band Alignment ◽  
Type Ii ◽  
Single Quantum ◽  
Energy Dispersion ◽  
Pl Spectra ◽  
Peak Energy

We have performed the magneto-photoluminescence (PL) measurements on ZnSe / BeTe quantum well (QW) structures with a type-II band alignment in a Voigt configuration. The PL spectra were composed of two components. The lower energy PL peak energy shows red-shifts applying magnetic field. A model of the energy dispersion shift of the spatially indirect exciton complexes probably explains these results.

scholarly journals Transport properties and seebeck coefficient of the quasi-twodimensional electron gas in ALP quantum wells

2015 ◽  
Vol 18 (3) ◽  
pp. 85-92
Author(s):  
Tai Van Vo ◽  
Khanh Quoc Nguyen
Keyword(s):  
Quantum Well ◽  
Seebeck Coefficient ◽  
Quantum Wells ◽  
Local Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Parallel Magnetic Field ◽  
Local Field Correction ◽  
Quantum Well Width

We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1   for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2   for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.

Nonlinear optical properties in the laser-dressed two-level AlxGa1−xN/GaN single quantum well

2018 ◽  
Vol 32 (04) ◽  
pp. 1850032 ◽  
Author(s):  
Monalisa Panda ◽  
Tapaswini Das ◽  
B. K. Panda
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Nonlinear Optical ◽  
Energy Levels ◽  
Internal Electric Field ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Increase With Increase

The electronic states in the laser-dressed hexagonal and cubic Al[Formula: see text]Ga[Formula: see text]N/GaN single quantum wells are calculated using the effective mass equation. The hexagonal single quantum well contains an internal electric field due to spontaneous and piezoelectric polarizations. The effective mass equation is solved by the finite difference method. The energy levels in both cubic and hexagonal laser-dressed wells are found to increase with increase in laser dressing as the effective well widths in both the wells increase. The intersubband energy spacing between first excited state and ground state increases in the cubic quantum well, whereas it decreases in the hexagonal well due to the presence of internal electric field in it. Using the compact density matrix method with iterative procedure, first-, second- and third-order nonlinear optical susceptibilities in the laser-dressed quantum well are calculated taking only two levels. While the susceptibilities in the hexagonal well are found to get red shifted, the susceptibilities in the cubic well are blue shifted.

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