scholarly journals Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells

2003 ◽  
Vol 93 (12) ◽  
pp. 9693-9696 ◽  
Author(s):  
Yi-Yin Chung ◽  
Yen-Sheng Lin ◽  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
En-Chiang Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Annealing Effects ◽  
Quantum Well Width

scholarly journals Внутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP

2018 ◽  
Vol 52 (2) ◽  
pp. 207
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря ◽  
А.Г. Зегря ◽  
В.Е. Бугров
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Radiation Absorption ◽  
Hole Density ◽  
Internal Radiation ◽  
Radiation Losses ◽  
Semiconductor Quantum Wells ◽  
Quantum Well Width ◽  
Split Band

AbstractMicroscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

Quantum well width dependence of exciton-phonon interaction in Cd0.33Zn0.67Te/ZnTe single quantum wells

1992 ◽  
Vol 81 (9) ◽  
pp. 801-805 ◽  
Author(s):  
J.P. Doran ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
R.D. Feldman ◽  
R.F. Austin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Single Quantum ◽  
Phonon Interaction ◽  
Quantum Well Width

Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure

2002 ◽  
Vol 46 (8) ◽  
pp. 1123-1126 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Indium Content ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Annealing Effects ◽  
High Indium Content

Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Fu ◽  
H. H. Tan ◽  
M. I. Cohen ◽  
C. Jagadish ◽  
L. V. Dao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Optoelectronic Device ◽  
Emission Wavelength ◽  
Device Integration ◽  
Proton Implantation

AbstractIon implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

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