quantum well infrared photodetectors
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2021 ◽  
Author(s):  
Mel Hainey Jr ◽  
Takaaki Mano ◽  
Takeshi Kasaya ◽  
Yoji Jimba ◽  
Hiroshi Miyazaki ◽  
...  

2021 ◽  
Vol 50 (1) ◽  
pp. 20211006-20211006
Author(s):  
李志锋 Zhifeng Li ◽  
李倩 Qian Li ◽  
景友亮 Youliang Jing ◽  
周玉伟 Yuwei Zhou ◽  
周靖 Jing Zhou ◽  
...  

2021 ◽  
Vol 50 (1) ◽  
pp. 20211006-20211006
Author(s):  
李志锋 Zhifeng Li ◽  
李倩 Qian Li ◽  
景友亮 Youliang Jing ◽  
周玉伟 Yuwei Zhou ◽  
周靖 Jing Zhou ◽  
...  

Author(s):  
Vurgaftman Igor

This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.


2020 ◽  
Vol 28 (11) ◽  
pp. 16427
Author(s):  
Jie Deng ◽  
Yuanliao Zheng ◽  
Jing Zhou ◽  
Zhifeng Li ◽  
Shangkun Guo ◽  
...  

2020 ◽  
Vol 53 (13) ◽  
pp. 135110
Author(s):  
Heming Yang ◽  
Yuanliao Zheng ◽  
Zhou Tang ◽  
Ning Li ◽  
Xiaohao Zhou ◽  
...  

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