Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

C. Ryan; Z. Olszewski; R. Houlihan; C. O'Mahony; A. Blake; R. Duane

doi:10.1063/1.4919718

Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Applied Physics Letters ◽

10.1063/1.4919718 ◽

2015 ◽

Vol 106 (17) ◽

pp. 172904 ◽

Cited By ~ 2

Author(s):

C. Ryan ◽

Z. Olszewski ◽

R. Houlihan ◽

C. O'Mahony ◽

A. Blake ◽

...

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Microelectromechanical Systems ◽

Capacitive Switches ◽

Transient Stress ◽

Silicon Dioxide Films ◽

Stress Induced Leakage Current

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Conduction mechanism and origin of stress‐induced leakage current in thin silicon dioxide films

Journal of Applied Physics ◽

10.1063/1.363655 ◽

1996 ◽

Vol 80 (11) ◽

pp. 6360-6369 ◽

Cited By ~ 53

Author(s):

Mikihiro Kimura ◽

Tadahiro Ohmi

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Conduction Mechanism ◽

Silicon Dioxide Films ◽

Thin Silicon ◽

Stress Induced Leakage Current

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A Two-Step Tunneling Model for the Stress Induced Leakage Current in Thin Silicon Dioxide Films

10.7567/ssdm.1993.a-4-5 ◽

1993 ◽

Cited By ~ 1

Author(s):

Naoki Yasuda ◽

Nalin Patel ◽

Akira Toriumi

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Tunneling Model ◽

Silicon Dioxide Films ◽

Thin Silicon ◽

Stress Induced Leakage Current

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Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling

Journal of Applied Physics ◽

10.1063/1.1429799 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1577-1588 ◽

Cited By ~ 5

Author(s):

W. K. Chim ◽

P. S. Lim

Keyword(s):

Silicon Dioxide ◽

Valence Band ◽

Leakage Current ◽

Conduction Band ◽

Electron Tunneling ◽

Band Electron ◽

Conduction Band Electron ◽

Stress Induced Leakage Current ◽

Improved Model ◽

Valence Band Electron

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Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5 nm) nitrided oxides

Journal of Applied Physics ◽

10.1063/1.1425438 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1304-1313 ◽

Cited By ~ 10

Author(s):

W. K. Chim ◽

P. S. Lim

Keyword(s):

Leakage Current ◽

Hole Injection ◽

Transient Stress ◽

Charge Relaxation ◽

Hole Trapping ◽

Stress Induced Leakage Current

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Influence of trapped charges on low-level leakage current in thin silicon dioxide films

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.982058 ◽

2005 ◽

Cited By ~ 1

Author(s):

T.P. Chen ◽

Y.L. Luo

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Low Level ◽

Silicon Dioxide Films ◽

Thin Silicon

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Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

10.1117/12.2238875 ◽

2016 ◽

Cited By ~ 2

Author(s):

Piyas Samanta ◽

Krishna C. Mandal

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Reliability Assessment ◽

Silicon Dioxide Films ◽

Current Conduction ◽

Thin Silicon

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A hot hole-induced low-level leakage current in thin silicon dioxide films

IEEE Transactions on Electron Devices ◽

10.1109/16.543028 ◽

1996 ◽

Vol 43 (11) ◽

pp. 1924-1929 ◽

Cited By ~ 28

Author(s):

N. Matsukawa ◽

S. Yamada ◽

K. Amemiya ◽

H. Hazama

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Low Level ◽

Silicon Dioxide Films ◽

Thin Silicon

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A Hot Carrier Induced Low-Level Leakage Current in Thin Silicon Dioxide Films

33rd IEEE International Reliability Physics Symposium ◽

10.1109/irps.1995.363351 ◽

1995 ◽

Author(s):

N. Matsukawa ◽

S. Yamada ◽

K. Amemiya ◽

H. Hazama

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Hot Carrier ◽

Low Level ◽

Silicon Dioxide Films ◽

Thin Silicon

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Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/10/004 ◽

2006 ◽

Vol 21 (10) ◽

pp. 1393-1401 ◽

Cited By ~ 7

Author(s):

Piyas Samanta ◽

Tsz Yin Man ◽

Alain Chun Keung Chan ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

...

Keyword(s):

Silicon Dioxide ◽

Experimental Evidence ◽

Leakage Current ◽

Gate Dielectrics ◽

Conduction Mechanisms ◽

Stress Induced Leakage Current

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Charging And Intrinsic-leakage Current Peaks In Thin Silicon-dioxide Films

Symposium on VLSI Technology ◽

10.1109/vlsit.1997.623741 ◽

1997 ◽

Cited By ~ 6

Author(s):

Yamada ◽

Yugami ◽

Ohkura

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Silicon Dioxide Films ◽

Thin Silicon

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