Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling

2002 ◽  
Vol 91 (3) ◽  
pp. 1577-1588 ◽  
Author(s):  
W. K. Chim ◽  
P. S. Lim
Keyword(s):  
Silicon Dioxide ◽  
Valence Band ◽  
Leakage Current ◽  
Conduction Band ◽  
Electron Tunneling ◽  
Band Electron ◽  
Conduction Band Electron ◽  
Stress Induced Leakage Current ◽  
Improved Model ◽  
Valence Band Electron

Two-Band Tunneling Currents and Stress-Induced Leakage in Ultra-Thin SiO2 Films

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Okhonin ◽  
A. Ils ◽  
D. Bouvet ◽  
P. Fazan ◽  
G. Guegan ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Electron Tunneling ◽  
Interface Trap Density ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Tunneling Currents ◽  
Stress Induced Leakage Current ◽  
Valence Band Electron ◽  
Nordheim Tunneling

ABSTRACTThe conduction band and valence band electron tunneling currents in ultra-thin SiO2 films at the transition from direct to Fowler-Nordheim tunneling regimes are studied. The slopes of the current voltage characteristics agree well with the simulations performed. The Stress-Induced Leakage Current (SILC) behavior is quite similar for both conduction and valence band currents even if the amplitude of the valence band SILC is much lower. We show that a linear dependence exists between the stress-induced interface trap density and both valence and conduction band SILC. A new model of SILC is also proposed.

scholarly journals Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

2005 ◽  
Vol 52 (9) ◽  
pp. 2061-2066 ◽  
Author(s):  
J.-W. Wu ◽  
J.-W. You ◽  
H.-C. Ma ◽  
C.-C. Cheng ◽  
C.-F. Hsu ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Band Electron ◽  
Ultrathin Oxide ◽  
Valence Band Electron

A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

2007 ◽  
Vol 54 (2) ◽  
pp. 316-322 ◽  
Author(s):  
W. Wu ◽  
Xin Li ◽  
G. Gildenblat ◽  
G.O. Workman ◽  
S. Veeraraghavan ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Compact Model ◽  
Band Electron ◽  
Valence Band Electron

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling

1999 ◽  
Vol 48 (1-4) ◽  
pp. 295-298 ◽  
Author(s):  
A. Shanware ◽  
H.Z. Massoud ◽  
E. Vogel ◽  
K. Henson ◽  
J.R. Hauser ◽  
...  
Keyword(s):  
Valence Band ◽  
Electron Tunneling ◽  
Band Electron ◽  
Valence Band Electron
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