Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5 nm) nitrided oxides

2002 ◽  
Vol 91 (3) ◽  
pp. 1304-1313 ◽  
Author(s):  
W. K. Chim ◽  
P. S. Lim
Keyword(s):  
Leakage Current ◽  
Hole Injection ◽  
Transient Stress ◽  
Charge Relaxation ◽  
Hole Trapping ◽  
Stress Induced Leakage Current

Stress induced leakage current generated by hot-hole injection

2013 ◽  
Vol 109 ◽  
pp. 298-301 ◽  
Author(s):  
Akinobu Teramoto ◽  
Hyeonwoo Park ◽  
Takuya Inatsuka ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hole Injection ◽  
Stress Induced Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

2015 ◽  
Vol 118 (16) ◽  
pp. 164101 ◽  
Author(s):  
Y. Li ◽  
A. Leśniewska ◽  
O. Varela Pedreira ◽  
J.-F. de Marneffe ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Stress Induced Leakage Current ◽  
Low K ◽  
Dielectric Degradation

Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

1999 ◽  
Vol 75 (5) ◽  
pp. 734-736 ◽  
Author(s):  
Nian-Kai Zous ◽  
Tahui Wang ◽  
Chih-Chich Yeh ◽  
C. W. Tsai ◽  
Chimoon Huang
Keyword(s):  
Leakage Current ◽  
Transient Effects ◽  
Oxide Charge ◽  
Stress Induced Leakage Current ◽  
Tunnel Oxides
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