scholarly journals Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

2013 ◽  
Vol 114 (15) ◽  
pp. 154108 ◽  
Author(s):  
Varistha Chobpattana ◽  
Thomas E. Mates ◽  
William J. Mitchell ◽  
Jack Y. Zhang ◽  
Susanne Stemmer
Keyword(s):  
Surface Cleaning ◽  
Gate Stack ◽  
Cleaning Procedures

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

scholarly journals Biocleaning to Remove Graffiti: A Real Possibility? Advances towards a Complete Protocol of Action

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 104 ◽  
Author(s):  
Patricia Sanmartín ◽  
Pilar Bosch-Roig
Keyword(s):  
Target Surface ◽  
Bacterial Strains ◽  
Simple Task ◽  
Anaerobic Microorganisms ◽  
Infrared Measurements ◽  
Complex Chemical Composition ◽  
Cleaning Procedures ◽  
Methodological Aspects ◽  
Reducing Bacteria

The first academic studies on the use of microorganisms in cleaning procedures appeared in the late 1980s/early 1990s. In the past thirty years, most of such studies have addressed the removal of nitrate and sulphate salts and organic matter from surfaces by using non-pathogenic anaerobic microorganisms, mainly sulphate-reducing bacteria. The successful use of microbes in the removal of graffiti paint remains, however, a work in progress. Biocleaning surfaces to remove graffiti is not a simple task, because of the complex chemical composition of graffiti paints. This study looks at ways of improving the bioremoval of graffiti and presents the latest findings regarding different methodological aspects of cleaning natural and man-made stone. Granite and concrete substrates were coated with silver and black graffiti spray paints for comparison of the efficacy of the biocleaning method on these different materials. Visual and microscopic examination along with colour and infrared measurements made after application of the bacterial strains tested (previously shown to be suitable candidates for bioremoval of graffiti) revealed remarkably successful results. The findings presented thus represent progress in the development of a biocleaning protocol applicable to the in-situ removal of graffiti. Important improvements have been made regarding the time of treatment, which has been reduced by up to 20 days, and the use of a culture medium enriched with powdered graffiti, which facilitates and accelerates the adaptation of the microorganisms to the target surface.

Preparation and Characterization of Epitaxial Yttrium Silicide on (111) Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
M. Gurvitch ◽  
A. F. J. Levi ◽  
R. T. Tung ◽  
S. Nakahara
Keyword(s):  
Schottky Barrier ◽  
Mean Free Path ◽  
Surface Cleaning ◽  
Preparation Technique ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Cleaning Procedures ◽  
The Mean ◽  
Sputter Deposited

AbstractEpitaxial YSi2-x films have been fabricated. The smooth ∼430 Å thick silicide films on Si(111) substrates were characterized by a Rutherford backscattering minimum channeling yield, Xmin = 8%. The best previously reported result, Xmin = 26%, was achieved using a relatively exotic e-beam heating method. By contrast we formed YSi2-x using a straightforward furnace annealing technique. We used improved Si surface cleaning procedures, sputter-deposited Y films, and performed two-stage anneals in a vacuum of ∼ 10−8 torr. The results of our work establish YSi2-x as one of the best epitaxial silicides. We describe our preparation technique as well as the evidence for epitaxy. Electrical measurements (Schottky barrier, temperature dependent resistivity, Hall effect) are also presented. Low temperature resistivity of YSi2-x is found to obey simple T5 Bloch's law. Based on resistivity data, YSi2-x appears to have a Debye temperature of 310 K. According to Hall measurements, it is an electronic conductor with n = 2.7 × 1022 cm−3 and the mean free path of electrons is ∼ 87 Å at 4.2 K. We measure a Schottky barrier height of 0.36 eV between YSi2-x, and n-type Si.

scholarly journals Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105117 ◽  
Author(s):  
Takahiro Gotow ◽  
Sachie Fujikawa ◽  
Hiroki I. Fujishiro ◽  
Mutsuo Ogura ◽  
Wen Hsin Chang ◽  
...  
Keyword(s):  
Plasma Processing ◽  
Surface Cleaning
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