Low Thermal Budget In Situ Surface Cleaning for Selective Silicon Epitaxy

1998 ◽  
Vol 145 (10) ◽  
pp. 3602-3609 ◽  
Author(s):  
S. Muhsin Celik ◽  
Mehmet C. Öztürk
Keyword(s):  
Surface Cleaning ◽  
Thermal Budget ◽  
Silicon Epitaxy ◽  
Low Thermal Budget

A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering

1999 ◽  
Vol 146 (3) ◽  
pp. 1189-1196 ◽  
Author(s):  
Ibrahim Ban ◽  
Mehmet C. Öztürk ◽  
Veena Misra ◽  
Jimmie J. Wortman ◽  
Dave Venables ◽  
...  
Keyword(s):  
Thermal Budget ◽  
Silicon Epitaxy ◽  
Channel Engineering ◽  
Low Thermal Budget

Low thermal budget in situ cleaning and passivation for silicon epitaxy in a multichamber rapid thermal processing cluster tool

1994 ◽  
Vol 21 (2) ◽  
pp. 137-141 ◽  
Author(s):  
Mahesh K. Sanganeria ◽  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
C.Archie Lee ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Budget ◽  
Silicon Epitaxy ◽  
Low Thermal Budget ◽  
Cluster Tool

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth

2001 ◽  
Vol 226 (4) ◽  
pp. 443-450 ◽  
Author(s):  
Takumi Nakahata ◽  
Kazuma Yamamoto ◽  
Junji Tanimura ◽  
Toru Inagaki ◽  
Taisuke Furukawa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Dry Etching ◽  
Surface Cleaning ◽  
Thermal Budget ◽  
Low Thermal Budget

Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning

1991 ◽  
Vol 224 ◽  
Author(s):  
Pushkar P. Apte ◽  
Ramnath Venkatraman ◽  
Krishna C. Saraswat ◽  
Mehrdad M. Moslehi ◽  
Richard Yeakley
Keyword(s):  
Semiconductor Manufacturing ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Crystal Silicon ◽  
Silicon Epitaxy ◽  
Anhydrous Hydrogen Fluoride ◽  
Manufacturing Techniques ◽  
Specific Manifestation ◽  
Low Thermal Budget

AbstractConventional semiconductor manufacturing techniques may be unable to meet technological demands in certain cases, and alternatives need to be investigated. We propose in situ sequential processing, which we define as ‘multiprocessing’, as a possible innovation. We demonstrate a specific manifestation of multiprocessing, namely the integration of a novel in situ pre-clean using anhydrous hydrogen fluoride with chemical vapor deposition of silicon, leading to the growth of high-quality single-crystal silicon epitaxy. Further, we show that the multiprocessing technology is viable for manufacturing, since it is simple, rapid, has a low thermal budget and does not suffer from cross-contamination. Finally, we discuss the possible role of multiprocessing in semiconductor manufacturing.

Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing

2017 ◽  
Vol 10 (2) ◽  
pp. 026502 ◽  
Author(s):  
Wen-Hsien Huang ◽  
Jia-Min Shieh ◽  
Ming-Hsuan Kao ◽  
Chang-Hong Shen ◽  
Tzu-En Huang ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Budget ◽  
Pulsed Laser Annealing ◽  
Low Thermal Budget
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