The Influence of Silicon Surface Cleaning Procedures on Silicon Oxidation

1987 ◽  
Vol 134 (4) ◽  
pp. 1031-1033 ◽  
Author(s):  
G. Gould ◽  
E. A. Irene
Keyword(s):  
Silicon Surface ◽  
Surface Cleaning ◽  
Silicon Oxidation ◽  
Cleaning Procedures

Effect of silicon surface-cleaning procedures on the growth of Cu3Si on Si(100)-oriented wafers

1991 ◽  
Vol 35 (5-6) ◽  
pp. 415-426 ◽  
Author(s):  
Dominique Viale ◽  
Guy Weber ◽  
Bernard Gillot
Keyword(s):  
Silicon Surface ◽  
Surface Cleaning ◽  
Cleaning Procedures

Silicon Surface Cleaning for Low Temperature Epitaxial Growth

1993 ◽  
Vol 315 ◽  
Author(s):  
John O. Borland ◽  
Carol Riggi ◽  
Faye Brocious
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Preparation and Characterization of Epitaxial Yttrium Silicide on (111) Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
M. Gurvitch ◽  
A. F. J. Levi ◽  
R. T. Tung ◽  
S. Nakahara
Keyword(s):  
Schottky Barrier ◽  
Mean Free Path ◽  
Surface Cleaning ◽  
Preparation Technique ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Cleaning Procedures ◽  
The Mean ◽  
Sputter Deposited

AbstractEpitaxial YSi2-x films have been fabricated. The smooth ∼430 Å thick silicide films on Si(111) substrates were characterized by a Rutherford backscattering minimum channeling yield, Xmin = 8%. The best previously reported result, Xmin = 26%, was achieved using a relatively exotic e-beam heating method. By contrast we formed YSi2-x using a straightforward furnace annealing technique. We used improved Si surface cleaning procedures, sputter-deposited Y films, and performed two-stage anneals in a vacuum of ∼ 10−8 torr. The results of our work establish YSi2-x as one of the best epitaxial silicides. We describe our preparation technique as well as the evidence for epitaxy. Electrical measurements (Schottky barrier, temperature dependent resistivity, Hall effect) are also presented. Low temperature resistivity of YSi2-x is found to obey simple T5 Bloch's law. Based on resistivity data, YSi2-x appears to have a Debye temperature of 310 K. According to Hall measurements, it is an electronic conductor with n = 2.7 × 1022 cm−3 and the mean free path of electrons is ∼ 87 Å at 4.2 K. We measure a Schottky barrier height of 0.36 eV between YSi2-x, and n-type Si.

Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

scholarly journals Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

2013 ◽  
Vol 114 (15) ◽  
pp. 154108 ◽  
Author(s):  
Varistha Chobpattana ◽  
Thomas E. Mates ◽  
William J. Mitchell ◽  
Jack Y. Zhang ◽  
Susanne Stemmer
Keyword(s):  
Surface Cleaning ◽  
Gate Stack ◽  
Cleaning Procedures
Sign in / Sign up

Export Citation Format

Share Document