scholarly journals Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105117 ◽  
Author(s):  
Takahiro Gotow ◽  
Sachie Fujikawa ◽  
Hiroki I. Fujishiro ◽  
Mutsuo Ogura ◽  
Wen Hsin Chang ◽  
...  
Keyword(s):  
Plasma Processing ◽  
Surface Cleaning

In situ growth rate measurements for plasma processing of opaque materials

2002 ◽  
Vol 418 (2) ◽  
pp. 151-155
Author(s):  
A Salifu ◽  
G Zhang ◽  
Edward A Evans
Keyword(s):  
Growth Rate ◽  
Plasma Processing ◽  
In Situ Growth

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

Dual Electrolytic Plasma Processing for Steel Surface Cleaning and Passivation

2017 ◽  
Vol 26 (10) ◽  
pp. 5009-5015 ◽  
Author(s):  
L. Yang ◽  
P. Zhang ◽  
J. Shi ◽  
J. Liang ◽  
W. B. Tian ◽  
...  
Keyword(s):  
Steel Surface ◽  
Plasma Processing ◽  
Surface Cleaning ◽  
Electrolytic Plasma Processing

In situ infrared ellipsometry study of plasma processing of metallic surfaces

1997 ◽  
Vol 94-95 ◽  
pp. 362-367 ◽  
Author(s):  
N. Bertrand ◽  
P. Bulkin ◽  
B. Drévillon ◽  
S. Lucas ◽  
S. Benayoun
Keyword(s):  
Plasma Processing ◽  
Metallic Surfaces ◽  
Infrared Ellipsometry

In-Situ Diagnostics For Plasma Processing

1989 ◽  
Author(s):  
P. Banks ◽  
W. Pilz ◽  
I. Hussla ◽  
G. Lorenz ◽  
G. Castrischer
Keyword(s):  
Plasma Processing ◽  
In Situ Diagnostics
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