Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

2013 ◽  
Vol 114 (13) ◽  
pp. 134301 ◽  
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Weifeng Zhang ◽  
Zhiguo Liu
Keyword(s):  
Conduction Mechanism ◽  
Resistance Switching ◽  
Memory Devices ◽  
Mechanism Of Resistance

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Resistance switching memory devices constructed on plastic with solution-processed titanium oxide

2009 ◽  
Vol 19 (14) ◽  
pp. 2082 ◽  
Author(s):  
Junggwon Yun ◽  
Kyoungah Cho ◽  
Byoungjun Park ◽  
Bae Ho Park ◽  
Sangsig Kim
Keyword(s):  
Titanium Oxide ◽  
Resistance Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Switching Memory

Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices

2013 ◽  
Vol 114 (4) ◽  
pp. 1377-1381 ◽  
Author(s):  
Dinglin Xu ◽  
Ying Xiong ◽  
Minghua Tang ◽  
Baiwen Zeng
Keyword(s):  
Resistance Switching ◽  
Memory Devices ◽  
Zno Film ◽  
Doped Zno

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

2008 ◽  
Vol 47 (8) ◽  
pp. 6266-6271 ◽  
Author(s):  
Kohei Fujiwara ◽  
Takumi Nemoto ◽  
Marcelo J. Rozenberg ◽  
Yoshinobu Nakamura ◽  
Hidenori Takagi
Keyword(s):  
Metal Structure ◽  
Resistance Switching ◽  
Binary Oxide ◽  
Memory Devices ◽  
Conductive Bridge

Effect of functional groups on microporous polymer based resistance switching memory devices

2020 ◽  
Vol 56 (47) ◽  
pp. 6356-6359
Author(s):  
Yaru Song ◽  
Jie Liu ◽  
Wanhui Li ◽  
Lei Liu ◽  
Ling Yang ◽  
...  
Keyword(s):  
Functional Groups ◽  
Resistance Switching ◽  
Memory Devices ◽  
Large Area ◽  
Air Interface ◽  
Microporous Polymer ◽  
Switching Memory

Here, two large-area microporous polymer (MP) films with different substituents were synthesized at the solution/air interface.

scholarly journals Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

RSC Advances ◽  
2019 ◽  
Vol 9 (17) ◽  
pp. 9392-9400 ◽  
Author(s):  
Jiahe Huang ◽  
Xiaofeng Zhao ◽  
Hongyan Zhang ◽  
Ju Bai ◽  
Shuhong Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Suzuki Reaction ◽  
Resistance Switching ◽  
Memory Devices

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized.

Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device

2012 ◽  
Vol 33 (3) ◽  
pp. 342-344 ◽  
Author(s):  
Yong-En Syu ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Geng-Wei Chang ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Electric Field ◽  
Conduction Mechanism ◽  
Resistance Switching ◽  
Switching Device
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